LSPR enhanced MSM UV photodetectors

Cataloged from PDF version of article.We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36nm diameter Al nanoparticles. Extinction spectra of the nanoparticles were measured through spectral transmission measurements. A resonant extinction peak around 300nm was obtained with Al nanoparticles. These particles gave rise to enhanced absorption in GaN at 340nm. Spectral responsivity measurements revealed an enhancement factor of 1.5. These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN. © 2012 IOP Publishing Ltd

Electron beam lithography designed silver nano-disks used as label free nano-biosensors based on localized surface plasmon resonance

Cataloged from PDF version of article.We present a label-free, optical nano-biosensor based on the Localized Surface Plasmon Resonance (LSPR) that is observed at the metaldielectric interface of silver nano-disk arrays located periodically on a sapphire substrate by Electron-Beam Lithography (EBL). The nano-disk array was designed by finite-difference and time-domain (FDTD) algorithm-based simulations. Refractive index sensitivity was calculated experimentally as 221-354 nm/RIU for different sized arrays. The sensing mechanism was first tested with a biotin-avidin pair, and then a preliminary trial for sensing heat-killed Escherichia coli (E. coli) O157:H7 bacteria was done. Although the study is at an early stage, the results indicate that such a plasmonic structure can be applied to bio-sensing applications and then extended to the detection of specific bacteria species as a fast and low cost alternative. © 2012 Optical Society of America

Nanoantenna coupled UV subwavelength photodtectors based on GaN

Cataloged from PDF version of article.The integration of nano structures with opto-electronic devices has many potential applications. It allows the coupling of more light into or out of the device while decreasing the size of the device itself. Such devices are reported in the VIS and NIR regions. However, making plasmonic structures for the UV region is still a challenge. Here, we report on a UV nano-antenna integrated metal semiconductor metal (MSM) photodetector based on GaN. We designed and fabricated Al grating structures. Well defined plasmonic resonances were measured in the reflectance spectra. Optimized grating structure integrated photodetectors exhibited more than sevenfold photocurrent enhancement. Finite difference time domain simulations revealed that both geometrical and plasmonic effects played role in photocurrent enhancement. (C) 2012 Optical Society of Americ

Validation of electromagnetic field enhancement in near-infrared through Sierpinski fractal nanoantennas

Cataloged from PDF version of article.We introduced fractal geometry to the conventional bowtie antennas. We experimentally and numerically showed that the resonance of the bowtie antennas goes to longer wavelengths, after each fractalization step, which is considered a tool to miniaturize the main bowtie structure. We also showed that the fractal geometry provides multiple hot spots on the surface, and it can be used as an efficient SERS substrate. (C)2014 Optical Society of America

Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

Cataloged from PDF version of article.We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of similar to274 nm was achieved with Al(x)Ga(1-x)N (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8 nA/cm(2) dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6x10(12) cm Hz(1/2)/W, and the detector noise was 1/f limited with a noise power density less than 3x10(-29) A(2)/Hz at 10 kHz. (C) 2002 American Institute of Physics

High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes

Cataloged from PDF version of article.We have fabricated GaN-based high-speed ultraviolet Schottkyphotodiodes using indium–tin–oxide (ITO) Schottky contacts. Before devicefabrication, the optical transparency of thin ITO films in the visible-blind spectrum was characterized via transmission and reflection measurements. The devices were fabricated on n−/n+GaN epitaxial layers using a microwave compatible fabrication process. Our ITO Schottkyphotodiode samples exhibited a maximum quantum efficiency of 47% around 325 nm. Time-based pulse-response measurements were done at 359 nm. The fabricateddevices exhibited a rise time of 13 ps and a pulse width of 60 ps. © 2001 American Institute of Physic

High-speed solar-blind photodetectors with indium-tin-oxide Schottky Contacts

Cataloged from PDF version of article.We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of <1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz. (C) 2003 American Institute of Physics

High-Speed InSb Photodetectors on GaAs for Mid-IR Applications

Cataloged from PDF version of article.We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 x 10(-6) cm(2) to 2.25 x 10(-4) cm(2) measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Omega cm(2). At 77 K, spectral measurements yielded high responsivity between 3 and 5 mum with the cutoff wavelength of 5.33 mum. The maximum responsivity for 80-mum diameter detectors was 1.00x10(5) V/W at 4.35 mum while the detectivity was 3.41x10(9) cm Hz(1/2) /W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 mum with the pump at 780 nm. 30-mum diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias

Strong Stabilization of a Class of MIMO Systems

Cataloged from PDF version of article.Stabilization of finite dimensional linear, time-invariant, multi-input multi-output plants by stable feedback controllers, known as the strong stabilization problem, is considered for a class of plants with restrictions on the zeros in the right-half complex plane. The plant class under consideration has no restrictions on the poles, or on the zeros in the open left-half complex plane, or on the zeros at the origin or at infinity; but only one finite positive real zero is allowed. A systematic strongly stabilizing controller design procedure is proposed. The freedom available in the design parameters may be used for additional performance objectives although the only goal here is strong stabilization. In the special case of single-input single-output plants within the class considered, the proposed stable controllers have order one less than the order of the plant

High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

Cataloged from PDF version of article.We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemissionphotodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physic