Remarks on strong stabilization and stable H∞ controller design

Cataloged from PDF version of article.A state space based design method is given to find strongly stabilizing controllers for multi-input-multi-output plants (MIMO). A sufficient condition is derived for the existence of suboptimal stable H∞ controller in terms of linear matrix inequalities (LMI) and the controller order is twice that of the plant A new parameterization of strongly stabilizing controllers is determined using linear fractional transformations (LFT)

Sensitivity minimization by strongly stabilizing controllers for a class of unstable time-delay systems

Cataloged from PDF version of article.Weighted sensitivity minimization is studied within the framework of strongly stabilizing (stable) H(infinity) controller design for a class of infinite dimensional systems. This problem has been solved by Ganesh and Pearson, [11], for finite dimensional plants using Nevanlinna-Pick interpolation. We extend their technique to a class of unstable time delay systems. Moreover, we illustrate suboptimal solutions, and their robust implementation

Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Cataloged from PDF version of article.In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al0.83In0.17N/AlN/GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250-375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel-Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Cataloged from PDF version of article.In order to explain the experimental effect of interface states (N-ss) and series resistance (R-s) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/omega-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent R-s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (sigma(ac)) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N-ss and R-s is confirmed to have significant effect on non-ideal I-V. C-V and G/omega-V characteristics of (Ni/Au)/Al0.22Ga038N/AlN/GaN heterostructures. (C) 2011 Elsevier Ltd. All rights reserved

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Cataloged from PDF version of article.Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current-voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications. (C) 2014 AIP Publishing LLC

Coupling enhancement of split ring resonators on graphene

Cataloged from PDF version of article.Metallic split ring resonator (SRR) structures are used in nanophotonics applications in order to localize and enhance incident electromagnetic field. Electrically controllable sheet carrier concentration of graphene provides a platform where the resonance of the SRRs fabricated on graphene can be tuned. The reflectivity spectra of SRR arrays shift by applying gate voltage, which modulates the sheet carrier concentration, and thereby the optical conductivity of monolayer graphene. We experimentally and numerically demonstrated that the tuning range can be increased by tailoring the effective mode area of the SRR and enhancing the interaction with graphene. The tuning capability is one of the important features of graphene based tunable sensors, optical switches, and modulator applications. © 2014 Elsevier Ltd. All rights reserved

Dwell-time computation for stability of switched systems with time delays

Cataloged from PDF version of article.The aim of this study is to find an improved dwell time that guarantees the stability of switched systems with heterogeneous constant time-delays. Piecewise Lyapunov-Krasovkii functionals are used for each candidate system to investigate the stability of the switched time-delayed system. Under the assumption that each candidate system is stable for small delay values, a sufficient condition for dwell-time that guarantees the asymptotic stability is derived. Numerical examples are given to compare the results with the previously obtained dwell-time bounds. © The Institution of Engineering and Technology 2013

LSPR enhanced MSM UV photodetectors

Cataloged from PDF version of article.We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36nm diameter Al nanoparticles. Extinction spectra of the nanoparticles were measured through spectral transmission measurements. A resonant extinction peak around 300nm was obtained with Al nanoparticles. These particles gave rise to enhanced absorption in GaN at 340nm. Spectral responsivity measurements revealed an enhancement factor of 1.5. These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN. © 2012 IOP Publishing Ltd

Electron beam lithography designed silver nano-disks used as label free nano-biosensors based on localized surface plasmon resonance

Cataloged from PDF version of article.We present a label-free, optical nano-biosensor based on the Localized Surface Plasmon Resonance (LSPR) that is observed at the metaldielectric interface of silver nano-disk arrays located periodically on a sapphire substrate by Electron-Beam Lithography (EBL). The nano-disk array was designed by finite-difference and time-domain (FDTD) algorithm-based simulations. Refractive index sensitivity was calculated experimentally as 221-354 nm/RIU for different sized arrays. The sensing mechanism was first tested with a biotin-avidin pair, and then a preliminary trial for sensing heat-killed Escherichia coli (E. coli) O157:H7 bacteria was done. Although the study is at an early stage, the results indicate that such a plasmonic structure can be applied to bio-sensing applications and then extended to the detection of specific bacteria species as a fast and low cost alternative. © 2012 Optical Society of America