Surface wave splitter based on metallic gratings with sub-wavelength aperture

Cataloged from PDF version of article.We investigated the splitting of surface electromagnetic waves trapped at the output surface of a one-dimensional metallic grating structure. The output gratings of the structure asymmetrically such that the output surfaces at the different sides of the subwavelength aperture can support surface waves at different frequencies. The transmission amplitude as measured at the left side is 1,000 times of that at the right side at 16 GHz. At 24 GHz, the transmission measured at the right side is 20 times that of the left side of the structure. Therefore, surface waves are guided into the different sides of the aperture at different frequencies via metallic gratings. The experimental results are in agreement with the theoretical results

Remarks on strong stabilization and stable H∞ controller design

Cataloged from PDF version of article.A state space based design method is given to find strongly stabilizing controllers for multi-input-multi-output plants (MIMO). A sufficient condition is derived for the existence of suboptimal stable H∞ controller in terms of linear matrix inequalities (LMI) and the controller order is twice that of the plant A new parameterization of strongly stabilizing controllers is determined using linear fractional transformations (LFT)

Sensitivity minimization by strongly stabilizing controllers for a class of unstable time-delay systems

Cataloged from PDF version of article.Weighted sensitivity minimization is studied within the framework of strongly stabilizing (stable) H(infinity) controller design for a class of infinite dimensional systems. This problem has been solved by Ganesh and Pearson, [11], for finite dimensional plants using Nevanlinna-Pick interpolation. We extend their technique to a class of unstable time delay systems. Moreover, we illustrate suboptimal solutions, and their robust implementation

Multi Input Dynamical Modeling of Heat Flow With Uncertain Diffusivity Parameter

Cataloged from PDF version of article.This paper focuses on the multi-input dynamical modeling of one-dimensional heat conduction process with uncertainty on thermal diffusivity parameter. Singular value decomposition is used to extract the most significant modes. The results of the spatiotemporal decomposition have been used in cooperation with Galerkin projection to obtain the set of ordinary differential equations, the solution of which synthesizes the temporal variables. The spatial properties have been generalized through a series of test cases and a low order model has been obtained. Since the value of the thermal diffusivity parameter is not known perfectly, the obtained model contains uncertainty. The paper describes how the uncertainty is modeled and how the boundary conditions are separated from the remaining terms of the dynamical equations. The results have been compared with those obtained through analytic solution

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Cataloged from PDF version of article.We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1-xN (x = 0.35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 Omega cm for AlxGa1-xN (x = 0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature. (c) 2006 Elsevier B.V. All rights reserved

Focusing surface plasmons via changing the incident angle

Cataloged from PDF version of article.We report a circular metallic aperture with a subwavelength circular slit in the microwave regime, in which we experimentally demonstrate that this aperture can excite and focus surface plasmons. Under normal illumination, there is no focusing of the surface plasmons. However, by changing the incident angle, it is possible to focus surface plasmons. We showed that under a 20 degrees illumination angle surface plasmons focus at 4 cm away from the center on the surface of the aperture. (C) 2008 American Institute of Physics

Highly directive radiation from sources embedded inside photonic crystals

Cataloged from PDF version of article.In this work, we have experimentally and theoretically studied the angular distribution of power emitted from a radiation source embedded inside a photonic crystal. Our results show that it is possible to obtain highly directive radiation sources operating at the band edge of the photonic crystal. Half power beam widths as small as 6degrees have been obtained. Our results also show that the angular distribution of power strongly depends on the frequency and on the size of the photonic crystal. (C) 2003 American Institute of Physics

Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range

Cataloged from PDF version of article.The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Phi(b0) show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation (J(TU)(0)) and tunneling parameters (E-0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K. (c) 2012 Elsevier B.V. All rights reserved

Sensitivity reduction by stable controllers for MIMO infinite dimensional systems via the tangential nevanlinna-pick interpolation

Cataloged from PDF version of article.We study the problem of finding a stable stabilizing controller that satisfies a desired sensitivity level for an MIMO infinite dimensional system. The systems we consider have finitely many simple transmission zeros in (C) over bar (+), but they are allowed to possess infinitely many poles in C+. We compute both upper and lower bounds of the minimum sensitivity achievable by a stable controller via the tangential Nevanlinna-Pick interpolation. We also obtain stable controllers attaining such an upper bound. To illustrate the results, we discuss a repetitive control system as an application of the proposed method

Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

Cataloged from PDF version of article.Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. (c) 2006 American Institute of Physics