Current Mechanism in HfO2-Gated Metal-Oxide-Semiconductor Devices

The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. The HfO2 film was coated on a single side of the p-Si (111) crystal using the spin coating method. The J-V measurements of the obtained structure at the temperatures between 100 and 320 K revealed that the current transport mechanism in the structure was compatible with the Schottky emission theory. The Schottky emission theory was also used to calculate the structure’s Schottky barrier heights (), dielectric constants () and refractive index values of the thin films at each temperature value. The dielectric constant and refractive index values were observed to decrease at decreasing temperatures. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of Al/HfO2/p-Si (MOS) structure was measured in the temperature range of 100–320 K. The values of measured C and G/ω decrease in accumulation and depletion regions with decreasing temperature due to localized at Si/HfO2 interface

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80–320 K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (ϕb) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80 K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV

Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices

The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities

Influence of illumination intensity on the electrical properties of Al/NOA65/p-Si/Al heterojunction MPS device

In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time. For this purpose, Al/NOA65/p-Si device was fabricated and the electric and dielectric parameters were investigated under the light and as well as dark. A good rectification ratio (1200 at 2 V) was achieved from the current-voltage (I-V) measurements in the dark. The reverse bias saturation current varied linearly with the illumination level, indicating to the photodiode behavior. The photosensitivity of the device reached 670 at 120 mW/cm(2). According to the frequency and voltage dependency of capacitance (C), conductance (G), and the derived dielectric parameters, the interface states and the surface dipoles at the interfacial layer were effective on the device. Besides, the changes in the mentioned parameters under illumination were associated with the charge carriers created by the light and the decrease in the series resistance

NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device

The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters of the device such as rectification ratio (RR), ideality factor (n), and barrier height (phi(B)) were determined from the current-voltage (I-V) measurements according to thermionic emission theory (TE). Series resistance, R-S, values were also calculated by Norde and Cheung methods in the range of 2.4-3 k omega. According to the reverse bias I-V measurements, the current was governed by Frenkel-Poole Emission (FPE) in the entire region. The voltage-dependent capacitance (C) and the conductance (G/omega) measurements were investigated at particular frequencies between 20 kHz and 1 MHz. The dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta), and the complex electric modulus (M) were calculated using the measured C and G parameters, and it was seen that the interface states and surface dipoles at the interfacial layer were effective in the behavior of the device in alternating current. Additionally, the morphological properties of the thin film were studied by scanning electron microscopy (SEM). We observed that (NOA61) organic interlayer may be a noticeable alternative to a variety of electronic applications

The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This study was formed by the β-naphthol orange/p-Si metal–insulator–semiconductor (MIS) structure by obtaining β-naphthol orange on the p-Si surface using the sol–gel and spin-coating techniques. FTIR, EDX, and NMR analyzes of the synthesized dye-sensitized β-naphthol orange were performed. At room temperature, the current–voltage (I–V) measurements of the Al/β-naphthol orange/p-Si MIS structure showed that the device has a high rectification ratio of 3 × 105. Series resistance values were calculated as 385 and 38 Ω by Norde and Cheung methods, respectively. It was determined that the interface state density of the device was at the level of 1013 eV−1 cm−2 and increased exponentially from the middle of the bandgap to the upper edge of the valence band. Frequency-dependent capacitance–voltage (C–V) measurements at room temperature showed that the interface state densities in the device are effective in determining device parameters

Synthesis and characterization of vanadium oxide thin films on different substrates

In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. The structural properties of the produced films were examined by XRD and SEM analyses. Besides, Al/VOx/p-Si metal-oxide-semiconductor (MOS) structure was obtained by the same synthesis method. Doping densities of these MOS structures were calculated from frequency dependent capacitance-voltage measurements. It was determined that the interface states which were assigned with the help of these parameters vary according to frequency