Assessment of capitalization as a management tool of economic development of a region

The article suggests the authors' definition of capitalization of regional economy as a process of effective business usage, increase of revenues and values of complex capital assets of regional economic agents. The functions of capitalization are systematized and peculiarities of their implementation at the regional level are revealed. The authors define and structure the objects of capitalization of regional economyyesBelgorod State Universit

ETIOPATHOGENIC BASES FOR THE FORMATION OF CEREBRAL PALSY IN CHILDREN (REFERENCE REVIEW)

The article shows data on the effect of different factor groups on the development of cerebral palsy in children, it also describes the pathogenetic features of its formation

Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification

Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe2_2

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface

Switching ferroelectricity in SnSe across diffusionless martensitic phase transition

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $\beta$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics

Primary dismernoria among teenager girls on the background of non-differentiated dysplasia of connecting tissue

Objective of the study: to identify the features of the primary dysmenorrhea clinic among adolescent girls with connective tissue dysplasia. The mean value of the rank index of pain in the main group is higher than in the comparison group. The emotional component prevailed in the inner picture of the perception of pain. Psycho-emotional status was distinguished by a high level of average score of reactive and personal anxiety. Summary. Systemic pathology associated with connective tissue dysplasia increases the clinical course of primary dysmenorrhea among adolescents, which gives grounds to differentiate the treatment and diagnostic algorith

Genetic determinants of complicated pregnancy

The connections of polymorphic variants of the gene of vasoactive hormones with the level of arterial pressure in pregnant women, depending on the development of preeclampsia (PE), have been studie

The study of the role of maternal and fetal risk factors in the development of placental insufficiency

The objectives were to study the role of maternal and fetal risk factors in the development of placental insufficiency (PI) and fetal growth retardation syndrome (FGRS