Tunable backaction of a dc SQUID on an integrated micromechanical resonator

We have measured the backaction of a dc superconducting quantum interference device (SQUID) position detector on an integrated 1 MHz flexural resonator. The frequency and quality factor of the micromechanical resonator can be tuned with bias current and applied magnetic flux. The backaction is caused by the Lorentz force due to the change in circulating current when the resonator displaces. The experimental features are reproduced by numerical calculations using the resistively and capacitively shunted junction (RCSJ) model.Comment: Submitted to Phys. Rev. Let

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

We examine the application of Josephson radiation emitters to spectral calibration of single-photon-resolving detectors. Josephson junctions are patterned in a YBCO film on a bicrystal sapphire substrate and are voltage controlled to generate radiation in the frequency range of 0.05-1 THz. The detector used in this work consists of a gate-defined quantum-dot photon-to-charge transducer coupled to a single-electron transistor. Both the emitter and the detector are equipped with a matching on-chip wide-band antenna. The combination of a tuneable emitter and detector allows us to determine the efficacy of the YBCO emitter and also to analyze the elementary processes involved in the detection

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically examined, including electronics and optoelectonics, electrocatalysis and photocatalysis, energy storage, lubrication, plasmonics, solar cells, and photonics. This review focuses on understanding the interplay between ALD precursors and deposition conditions, the resulting film characteristics such as thickness, crystallinity, and morphology, and ultimately device performance. Through rational choice of precursors and conditions, ALD is observed to exhibit potential to meet the varying requirements of widely different applications. Beyond the current state of ALD TMDCs, the future prospects, opportunities, and challenges in different applications are discussed. The authors hope that the review aids in bringing together experts in the fields of ALD, TMDCs, and various applications to eventually realize industrial applications of ALD TMDCs.Peer reviewe