Dipole antenna couplers for subwavelength metal-insulator-metal waveguides

Near-infrared light (λ=1550 nm) was coupled into a 100-nm-core Ag/SiO2/Ag waveguide using dipole antennas. We demonstrate that using antennas, the field intensity inside the waveguide can be enhanced by changing the antenna size and location. © 2010 OSA /FiO/LS 2010

Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers

The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials. © 2006 IEEE

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE

High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America

SrGa0.7Co0.3O3-δ perovskite-cobalt oxide-metal nanocomposite films: Magnetic and optical properties

10.1088/0957-4484/26/11/115701Nanotechnology261