4 research outputs found

    Enhanced Water Splitting Efficiency Through Selective Surface State Removal

    No full text
    Hematite (α-Fe<sub>2</sub>O<sub>3</sub>) thin film electrodes prepared by atomic layer deposition (ALD) were employed to photocatalytically oxidize water under 1 sun illumination. It was shown that annealing at 800 °C substantially improves the water oxidation efficiency of the ultrathin film hematite electrodes. The effect of high temperature treatment is shown to remove one of two surface states identified, which reduces recombination and Fermi level pinning. Further modification with Co–Pi water oxidation catalyst resulted in unprecedented photocurrent onset potential of ∼0.6 V versus reversible hydrogen electrode (RHE; slightly positive of the flat band potential)

    Enhanced Water Splitting Efficiency Through Selective Surface State Removal

    No full text
    Hematite (α-Fe<sub>2</sub>O<sub>3</sub>) thin film electrodes prepared by atomic layer deposition (ALD) were employed to photocatalytically oxidize water under 1 sun illumination. It was shown that annealing at 800 °C substantially improves the water oxidation efficiency of the ultrathin film hematite electrodes. The effect of high temperature treatment is shown to remove one of two surface states identified, which reduces recombination and Fermi level pinning. Further modification with Co–Pi water oxidation catalyst resulted in unprecedented photocurrent onset potential of ∼0.6 V versus reversible hydrogen electrode (RHE; slightly positive of the flat band potential)

    Substrate Dependent Water Splitting with Ultrathin α‑Fe<sub>2</sub>O<sub>3</sub> Electrodes

    No full text
    Thin films of hematite (α-Fe<sub>2</sub>O<sub>3</sub>) were deposited by atomic layer deposition (ALD), and the effects of metal oxide underlayers on the photocatalytic water oxidation performance were investigated. It was found that a Ga<sub>2</sub>O<sub>3</sub> underlayer dramatically enhances the water oxidation performance of the thinnest hematite films. The performance enhancement is attributed to the increased crystallinity of the ultrathin films induced by the oxide underlayers. The degree of crystallinity was examined by Raman line shape analysis of the characteristic hematite phonon modes. It was found that multiple metal oxide underlayers, including Nb<sub>2</sub>O<sub>5</sub>, ITO, and WO<sub>3</sub>, increase the film crystallinity compared to hematite deposited on bare FTO. The increased crystallite size was also clearly evident from the high resolution SEM images. The degree of crystallinity was found to correlate with absorbance and the photocatalytic water oxidation performance. These findings shed light on the origin of the dead layer at the interface of the FTO substrate and ultrathin hematite films and elucidate strategies at overcoming it
    corecore