Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns)

vbyCaHbeta CCD Photometry of Clusters. VI. The Metal-Deficient Open Cluster NGC 2420

CCD photometry on the intermediate-band vbyCaHbeta system is presented for the metal-deficient open cluster, NGC 2420. Restricting the data to probable single members of the cluster using the CMD and the photometric indices alone generates a sample of 106 stars at the cluster turnoff. The average E(b-y) = 0.03 +/- 0.003 (s.e.m.) or E(B-V) = 0.050 +/- 0.004 (s.e.m.), where the errors refer to internal errors alone. With this reddening, [Fe/H] is derived from both m1 and hk, using b-y and Hbeta as the temperature index. The agreement among the four approaches is reasonable, leading to a final weighted average of [Fe/H] = -0.37 +/- 0.05 (s.e.m.) for the cluster, on a scale where the Hyades has [Fe/H] = +0.12. When combined with the abundances from DDO photometry and from recalibrated low-resolution spectroscopy, the mean metallicity becomes [Fe/H] = -0.32 +/- 0.03. It is also demonstrated that the average cluster abundances based upon either DDO data or low-resolution spectroscopy are consistently reliable to 0.05 dex or better, contrary to published attempts to establish an open cluster metallicity scale using simplistic offset corrections among different surveys.Comment: scheduled for Jan. 2006 AJ; 33 pages, latex, includes 7 figures and 2 table

Heat and extension at mid- and lower crustal levels of the Rio Grande rift

The process by which large amounts (50 to 200 percent) of crustal extension are produced was concisely described by W. Hamilton in 1982 and 1983. More recently, England, Sawyer, P. Morgan and others have moved toward quantifying models of lithospheric thinning by incorporating laboratory and theoretical data on rock rheology as a function of composition, temperature, and strain rate. Hamilton's description identifies three main crustal layers, each with a distinctive mechanical behavior; brittle fracturing and rotation in the upper crust, discontinuous ductile flow in the middle crust and laminar ductile flow in the lower crust. The temperature and composition dependent brittle-ductile transition essentially defines the diffuse boundary between upper and middle crust. It was concluded that the heat responsible for the highly ductile nature of the lower crust and the lensoidal and magma body structures at mid-crustal depths in the rift was infused into the crust by relatively modest ( 10 percent by mass) magmatic upwelling (feeder dikes) from Moho levels. Seismic velocity-versus-depth data, supported by gravity modeling and the fact that volumes of rift related volcanics are relatively modest ( 6000 cubic km) for the Rio Grande system, all imply velocities and densities too small to be consistent with a massive, composite, mafic intrusion in the lower crust

Coupled atomic-molecular condensates in a double-well potential: decaying molecular oscillations

We present a four-mode model that describes coherent photo-association (PA) in a double-well Bose-Einstein condensate, focusing on the $average$ molecular populations in certain parameters. Our numerical results predict an interesting strong-damping effect of molecular oscillations by controlling the particle tunnellings and PA light strength, which may provide a promising way for creating a stable molecular condensate via coherent PA in a magnetic double-well potential.Comment: 6 pages, 4 figures, submitte

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated. The negative drain conductance caused by self-heating at high power levels leads to negative self-gain which can cause anomalous circuit behavior like non-linear phase shifts. Using AC and DC measurements, it is shown that reducing the SRB thickness improves the analog design space and performance by minimizing self-heating. The range of terminal voltages that leverage positive self-gain in 0.1 μm strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared with strained Si devices fabricated on conventional SiGe SRBs 4 μm thick. Strained Si nMOSFETs fabricated on thin SiGe SRBs also show 45% improvement in the self-gain compared with the Si control as well as 25% enhancement in the on-state performance compared with the strained Si nMOSFETs on the 4 μm SiGe SRB. The extracted thermal resistance is 50% lower in the strained Si device on the thin SiGe SRB corresponding to a 30% reduction in the temperature rise compared with the device fabricated on the 4 μm SiGe SRB. Comparisons between the maximum drain voltages for positive self-gain in the strained Si devices and the ITRS projections of supply-voltage scaling show that reducing the thickness of the SiGe SRB would be necessary for future technology nodes

Frequency Dependent Specific Heat from Thermal Effusion in Spherical Geometry

We present a novel method of measuring the frequency dependent specific heat at the glass transition applied to 5-polyphenyl-4-ether. The method employs thermal waves effusing radially out from the surface of a spherical thermistor that acts as both a heat generator and thermometer. It is a merit of the method compared to planar effusion methods that the influence of the mechanical boundary conditions are analytically known. This implies that it is the longitudinal rather than the isobaric specific heat that is measured. As another merit the thermal conductivity and specific heat can be found independently. The method has highest sensitivity at a frequency where the thermal diffusion length is comparable to the radius of the heat generator. This limits in practise the frequency range to 2-3 decades. An account of the 3omega-technique used including higher order terms in the temperature dependency of the thermistor and in the power generated is furthermore given.Comment: 17 pages, 15 figures, Substantially revised versio

Molecular Approaches to Sarcoma Therapy

Soft tissue sarcomas comprise a heterogeneous group of aggressive tumors that have a relatively poor prognosis. Although conventional therapeutic regimens can effectively cytoreduce the overall tumor mass, they fail to consistently achieve a curative outcome. Alternative gene-based approaches that counteract the underlying neoplastic process by eliminating the clonal aberrations that potentiate malignant behavior have been proposed. As compared to the accumulation of gene alterations associated with epithelial carcinomas, sarcomas are frequently characterized by the unique presence of a single chromosomal translocation in each histological subtype. Similar to the Philadelphia chromosome associated with CML, these clonal abnormalities result in the fusion of two independent unrelated genes to generate a unique chimeric protein that displays aberrant activity believed to initiate cellular transformation. Secondary gene mutations may provide an additional growth advantage that further contributes to malignant progression. The recent clinical success of the tyrosine kinase inhibitor, STI571, suggests that therapeutic approaches specifically directed against essential survival factors in sarcoma cells may be effective. This review summarizes published approaches targeting a specific molecular mechanism associated with sarcomagenesis. The strategy and significance of published translational studies in six distinct areas are presented. These include: (1) the disruption of chimeric transcription factor activity; (2) inhibition of growth stimulatory post-translational modifications; (3) restoration of tumor suppressor function; (4) interference with angiogenesis; (5) induction of apoptotic pathways; and (6) introduction of toxic gene products. The potential for improving outcomes in sarcoma patients and the conceptual obstacles to be overcome are discussed