Elementary electronic excitation from a two-dimensional hole gas in the presence of spin-orbit interaction

We present a theoretical study of the elementary electronic excitation associated with plasmon modes in a two-dimensional hole gas (2DHG) in the presence of spin-orbit (SO) interaction induced by the Rashba effect. The calculation is carried out using a standard random-phase-approximation approach. It is found that in such a spintronic system, plasmon excitation can be achieved via intra- and inter-SO electronic transitions around the Fermi level. As a result, the intra- and inter-SO plasmon modes can be observed. More importantly, the plasmon modes induced by inter-SO transition are optic-like and these modes can be directly applied to identify the Rashba spin splitting in 2DHG systems through optical measurements. The interesting features of the plasmon excitation in a spin split 2DHG are analyzed and discussed in details. Moreover, the results obtained for a 2DHG are compared with those obtained for a spin-splitting 2DEG reported very recently.Comment: 17 pages and 6 figure

Plasmons in coupled bilayer structures

We calculate the collective charge density excitation dispersion and spectral weight in bilayer semiconductor structures {\it including effects of interlayer tunneling}. The out-of-phase plasmon mode (the ``acoustic'' plasmon) develops a long wavelength gap in the presence of tunneling with the gap being proportional to the square root (linear power) of the tunneling amplitude in the weak (strong) tunneling limit. The in-phase plasmon mode is qualitatively unaffected by tunneling. The predicted plasmon gap should be a useful tool for studying many-body effects.Comment: 10 pages, 6 figures. to appear in Phys. Rev. Let

Pressure Dependence of Born Effective Charges, Dielectric Constant and Lattice Dynamics in SiC

The pressure dependence of the Born effective charge, dielectric constant and zone-center LO and TO phonons have been determined for $3C$-SiC by a linear response method based on the linearized augmented plane wave calculations within the local density approximation. The Born effective charges are found to increase nearly linearly with decreasing volume down to the smallest volume studied, $V/V_0=0.78$, corresponding to a pressure of about 0.8 Mbar. This seems to be in contradiction with the conclusion of the turnover behavior recently reported by Liu and Vohra [Phys.\ Rev.\ Lett.\ {\bf 72}, 4105 (1994)] for $6H$-SiC. Reanalyzing their procedure to extract the pressure dependence of the Born effective charges, we suggest that the turnover behavior they obtained is due to approximations in the assumed pressure dependence of the dielectric constant $\varepsilon_\infty$, the use of a singular set of experimental data for the equation of state, and the uncertainty in measured phonon frequencies, especially at high pressure.Comment: 25 pages, revtex, 5 postscript figures appended, to be published in Phys. Rev.

Dynamical-charge neutrality at a crystal surface

For both molecules and periodic solids, the ionic dynamical charge tensors which govern the infrared activity are known to obey a dynamical neutrality condition. This condition enforces their sum to vanish (over the whole finite system, or over the crystal cell, respectively). We extend this sum rule to the non trivial case of the surface of a semiinfinite solid and show that, in the case of a polar surface of an insulator, the surface ions cannot have the same dynamical charges as in the bulk. The sum rule is demonstrated through calculations for the Si-terminated SiC(001) surface.Comment: 4 pages, latex file, 1 postscript figure automatically include

Dielectric Properties of the Quasi-Two-Dimensional Electron Liquid in Heterojunctions

A quasi-two-dimensional (Q2D) electron liquid (EL) is formed at the interface of a semiconductor heterojunction. For an accurate characterization of the Q2D EL, many-body effects need to be taken into account beyond the random phase approximation. In this theoretical work, the self-consistent static local-field correction known as STLS is applied for the analysis of the Q2D EL. The penetration of the charge distribution to the barrier-acting material is taken into consideration through a variational approach. The Coulomb from factor that describes the effective 2D interaction is rigorously treated. The longitudinal dielectric function and the plasmon dispersion of the Q2D EL are presented for a wide range of electron and ionized acceptor densities choosing GaAs/AlGaAs as the physical system. Analytical expressions fitted to our results are also supplied to enable a widespread use of these results.Comment: 39 pages (in LaTeX), including 8 PostScript figure

Surface plasmons in metallic structures

Since the concept of a surface collective excitation was first introduced by Ritchie, surface plasmons have played a significant role in a variety of areas of fundamental and applied research, from surface dynamics to surface-plasmon microscopy, surface-plasmon resonance technology, and a wide range of photonic applications. Here we review the basic concepts underlying the existence of surface plasmons in metallic structures, and introduce a new low-energy surface collective excitation that has been recently predicted to exist.Comment: 14 pages, 14 figures, to appear in J. Opt. A: Pure Appl. Op

Many-body correlations probed by plasmon-enhanced drag measurements in double quantum well structures

Electron drag measurements of electron-electron scattering rates performed close to the Fermi temperature are reported. While evidence of an enhancement due to plasmons, as was recently predicted [K. Flensberg and B. Y.-K. Hu, Phys. Rev. Lett. 73, 3572 (1994)], is found, important differences with the random-phase approximation based calculations are observed. Although static correlation effects likely account for part of this difference, it is argued that correlation-induced multiparticle excitations must be included to account for the magnitude of the rates and observed density dependences.Comment: 4 pages, 3 figures, revtex Accepted in Phys. Rev.

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

We calculate the electron-electron interaction induced energy-dependent inelastic carrier relaxation rate in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. In particular, we calculate, using many-body theory, the imaginary part of the full self-energy matrix by expanding in the dynamically RPA screened Coulomb interaction, obtaining the intrasubband and intersubband electron relaxation rates in the ground and excited subbands as a function of electron energy. We separate out the single particle and the collective excitation contributions, and comment on the effects of structural asymmetry in the quantum well on the relaxation rate. Effects of dynamical screening and Fermi statistics are automatically included in our many body formalism rather than being incorporated in an ad-hoc manner as one must do in the Boltzman theory.Comment: 26 pages, 5 figure

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

The band-gap energy and the band line-up of InGaAlAs quaternary compound material on InP are essential information for the theoretical study of physical properties and the design of optoelectronics devices operating in the long-wavelength communication window. The band-gap interpolation of In1-x-y Ga (x) Al (y) As on InP is known to be a challenging task due to the observed discrepancy of experimental results arising from the bowing effect. Besides, the band line-up results of In1-x-y Ga (x) Al (y) As on InP based on previously reported models have limited success by far. In this work, we propose an interpolation solution using the single-variable surface bowing estimation interpolation method for the fitting of experimentally measured In1-x-y Ga (x) Al (y) As band-gap data with various degree of bowing using the same set of input parameters. The suggested solution provides an easier and more physically interpretable way to determine not only lattice matched, but also strained band-gap energy of In1-x-y Ga (x) Al (y) As on InP based on the experimental results. Interpolated results from this convenient method show a more favourable match to multiple independent experiment data sets measured under different temperature conditions as compared to those obtained from the commonly used weighted-sum approach. On top of that, extended framework of the model-solid theory for the band line-up of In1-x-y Ga (x) Al (y) As/InP heterostructure is proposed. Our model-solid theory band line-up result using the proposed extended framework has shown an improved accuracy over those without the extension. In contrast to some previously reported works, it is worth noting that the band line-up result based on our proposed extended model-solid theory has also shown to be more accurate than those given by Harrison's mode