109 research outputs found

    Nitric oxide, cell multiplication, and cell survival

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    Arrest of cell division is crucial for cells to enter a program of terminal differentiation. In the developing organ or a differentiating tissue, growth arrest defines roughly the size of the cellular population that is further committed to become a domain of differentiated cells. Eventually, the balance between the number of cell divisions and the extent of subsequent programmed cell death determines the final size of a domain, a tissue, or an organ (for review, see Bryant and Simpson 1984; Raff 1992, 1996). Mitogenesis, cytostasis, and survival of neuronal cells can be induced and maintained by the same or by different growth or trophic factors. The signaling pathways that coordinate proliferation, growth arrest, and survival of cells and groups of cells in developing organisms are not known, but they probably involve as yet undetermined inter- and intra-cellular second messenger molecules

    Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy

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    Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.Comment: 13 pages, 4 figure

    Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)3_{3}O4_{4} thin films exhibiting photo-induced magnetization

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    By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)3_{3}O4_{4} thin films, which exhibits a cluster glass behavior with a spin-freezing temperature TfT_f of 230\sim 230 K and photo-induced magnetization (PIM) below TfT_f. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe3+^{3+}) and tetravalent (Ti4+^{4+}), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe2+^{2+} ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.Comment: 4 pages, 4 figure

    Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn1x_{1-x}Vx_xO thin film

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    We performed a soft x-ray magnetic circular dichroism (XMCD) study of a Zn1x_{1-x}Vx_xO thin film which showed small ferromagnetic moment. Field and temperature dependences of V 2pp XMCD signals indicated the coexistence of Curie-Weiss paramagnetic, antiferromagnetic, and possibly ferromagnetic V ions, quantitatively consistent with the magnetization measurements. We attribute the paramagnetic signal to V ions substituting Zn sites which are somewhat elongated along the c-axis

    Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nano-particles

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    We have studied the electronic structure of Zn0.9_{0.9}Fe0.1_{0.1}O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe3+^{3+} ionic state with mixture of a small amount of Fe2+^{2+} and that Fe3+^{3+} ions are dominant in the surface region of the nano-particles. It is shown that the room temperature ferromagnetism in the Zn0.9_{0.9}Fe0.1_{0.1}O nano-particles is primarily originated from the antiferromagnetic coupling between unequal amounts of Fe3+^{3+} ions occupying two sets of nonequivalent positions in the region of the XMCD probing depth of \sim 2-3 nm.Comment: Single column, 12 pages, 8 figures, 1 tabl

    Angle-resolved photoemission study of MX-chain compound [Ni(chxn)2_2Br]Br2_2

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    We report on the results of angle-resolved photoemission experiments on a quasi-one-dimensional MXMX-chain compound [Ni(chxn)2_2Br]Br2_2 (chxn = 1RR,2RR-cyclohexanediamine), a one-dimensional Heisenberg system with S=1/2S=1/2 and J3600J \sim 3600 K, which shows a gigantic non-linear optical effect. A "band" having about 500 meV energy dispersion is found in the first half of the Brillouin zone (0kb/π<1/2)(0\le kb/\pi <1/2), but disappears at kb/π1/2kb / \pi \sim 1/2. Two dispersive features, expected from the spin-charge separation, as have been observed in other quasi-one-dimensional systems like Sr2_2CuO3_3, are not detected. These characteristic features are well reproduced by the dd-pp chain model calculations with a small charge-transfer energy Δ\Delta compared with that of one-dimensional Cu-O based compounds. We propose that this smaller Δ\Delta is the origin of the absence of clear spin- and charge-separation in the photoemission spectra and strong non-linear optical effect in [Ni(chxn)2_2Br]Br2_2.Comment: 4 pages, 3 figure

    Local electronic structure of Cr in the II-VI diluted ferromagnetic semiconductor Zn1x_{1-x}Crx_xTe

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    The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn1x_{1-x}Crx_xTe (x=0.03x=0.03 and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field (HH) and temperature (TT) dependences of the Cr 2p2p XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr 2p2p XMCD spectra is independent of HH, TT, and xx, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicates that although there are two or more kinds of Cr ions in the Zn1x_{1-x}Crx_xTe samples, the ferromagnetic XMCD signal is originated from Cr ions substituted for the Zn site. The Cr 3d partial density of states extracted using Cr 2p3d2p \to 3d resonant PES shows a broad feature near the top of the valence band, suggesting strong ss,pp-dd hybridization. No density of states is detected at the Fermi level, consistent with their insulating behavior. Based on these findings, we conclude that double exchange mechanism cannot explain the ferromagnetism in Zn1x_{1-x}Crx_{x}Te.Comment: Accepted for New Journal of Physics. Single column, 21 pages, 7 figure

    Electronic structure of Ga1x_{1-x}Crx_{x}N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

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    The electronic structure of the magnetic semiconductor Ga1x_{1-x}Crx_{x}N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3dd states appear within the band gap of GaN just above the N 2pp-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2pp) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr2+^{2+} species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.Comment: 5 pages, 3 figure
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