1,325 research outputs found
Disorder, spin-orbit, and interaction effects in dilute
We derive an effective Hamiltonian for in
the dilute limit, where can be described in
terms of spin polarons hopping between the {\rm Mn} sites and coupled
to the local {\rm Mn} spins. We determine the parameters of our model from
microscopic calculations using both a variational method and an exact
diagonalization within the so-called spherical approximation. Our approach
treats the extremely large Coulomb interaction in a non-perturbative way, and
captures the effects of strong spin-orbit coupling and Mn positional disorder.
We study the effective Hamiltonian in a mean field and variational calculation,
including the effects of interactions between the holes at both zero and finite
temperature. We study the resulting magnetic properties, such as the
magnetization and spin disorder manifest in the generically non-collinear
magnetic state. We find a well formed impurity band fairly well separated from
the valence band up to for which finite size
scaling studies of the participation ratios indicate a localization transition,
even in the presence of strong on-site interactions, where is the fraction of magnetically active Mn. We study the
localization transition as a function of hole concentration, Mn positional
disorder, and interaction strength between the holes.Comment: 15 pages, 12 figure
Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors
Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically
and compared to experimental results. The recently developed model of spin
transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev.
B 72, 205322 (2005)] is employed. The model combines the disorder-free
Landauer-B\"uttiker formalism with the tight-binding description of the host
band structure. The obtained results show how much the spherical 4x4 kp model
[Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the
adiabatic limit, and reveal the dependence of DWR on the magnetization profile
and crystallographic orientation of the wall.Comment: 4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Com
Mechanism of carrier-induced ferromagnetism in magnetic semiconductors
Taking into account both random impurity distribution and thermal
fluctuations of localized spins, we have performed a model calculation for the
carrier (hole) state in GaMnAs by using the coherent potential
approximation (CPA). The result reveals that a {\it p}-hole in the band tail of
GaMnAs is not like a free carrier but is rather virtually bounded
to impurity sites. The carrier spin strongly couples to the localized {\it d}
spins on Mn ions. The hopping of the carrier among Mn sites causes the
ferromagnetic ordering of the localized spins through the double-exchange
mechanism. The Curie temperature obtained by using conventional parameters
agrees well with the experimental result.Comment: 7 pages, 4 figure
Electronic structure of InMnAs studied by photoemission spectroscopy: Comparison with GaMnAs
We have investigated the electronic structure of the -type diluted
magnetic semiconductor InMnAs by photoemission spectroscopy. The Mn
3 partial density of states is found to be basically similar to that of
GaMnAs. However, the impurity-band like states near the top of
the valence band have not been observed by angle-resolved photoemission
spectroscopy unlike GaMnAs. This difference would explain the
difference in transport, magnetic and optical properties of
InMnAs and GaMnAs. The different electronic
structures are attributed to the weaker Mn 3 - As 4 hybridization in
InMnAs than in GaMnAs.Comment: 4 pages, 3 figure
Spin-dependent tunneling in modulated structures of (Ga,Mn)As
A model of coherent tunneling, which combines multi-orbital tight-binding
approximation with Landauer-B\"uttiker formalism, is developed and applied to
all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A
comparison of theoretical predictions and experimental results on
spin-dependent Zener tunneling, tunneling magnetoresistance (TMR), and
anisotropic magnetoresistance (TAMR) is presented. The dependence of spin
current on carrier density, magnetization orientation, strain, voltage bias,
and spacer thickness is examined theoretically in order to optimize device
design and performance.Comment: 9 pages, 13 figures, submitted to PR
The Crossover from Impurity to Valence Band in Diluted Magnetic Semiconductors: The Role of the Coulomb Attraction by Acceptor
The crossover between an impurity band (IB) and a valence band (VB) regime as
a function of the magnetic impurity concentration in models for diluted
magnetic semiconductors (DMS) is studied systematically by taking into
consideration the Coulomb attraction between the carriers and the magnetic
impurities. The density of states and the ferromagnetic transition temperature
of a Spin-Fermion model applied to DMS are evaluated using Dynamical Mean-Field
Theory (DMFT) and Monte Carlo (MC) calculations. It is shown that the addition
of a square-well-like attractive potential can generate an IB at small enough
Mn doping for values of the exchange that are not strong enough
to generate one by themselves. We observe that the IB merges with the VB when
where is a function of and the Coulomb attraction strength
. Using MC calculations, we demonstrate that the range of the Coulomb
attraction plays an important role. While the on-site attraction, that has been
used in previous numerical simulations, effectively renormalizes for all
values of , an unphysical result, a nearest-neighbor range attraction
renormalizes only at very low dopings, i.e., until the bound holes wave
functions start to overlap. Thus, our results indicate that the Coulomb
attraction can be neglected to study Mn doped GaSb, GaAs, and GaP in the
relevant doping regimes, but it should be included in the case of Mn doped GaN
that is expected to be in the IB regime.Comment: 8 pages, 4 Postscript figures, RevTex
Theoretical models of ferromagnetic III-V semiconductors
Recent materials research has advanced the maximum ferromagnetic transition
temperature in semiconductors containing magnetic elements toward room
temperature. Reaching this goal would make information technology applications
of these materials likely. In this article we briefly review the status of work
over the past five years which has attempted to achieve a theoretical
understanding of these complex magnetic systems. The basic microscopic origins
of ferromagnetism in the (III,Mn)V compounds that have the highest transition
temperatures appear to be well understood, and efficient computation methods
have been developed which are able to model their magnetic, transport, and
optical properties. However many questions remain.Comment: 4 pages, 4 figures, review, to be published in Curr. Appl. Phy
Combined approach of density functional theory and quantum Monte Carlo method to electron correlation in dilute magnetic semiconductors
We present a realistic study for electronic and magnetic properties in dilute
magnetic semiconductor (Ga,Mn)As. A multi-orbital Haldane-Anderson model
parameterized by density-functional calculations is presented and solved with
the Hirsch-Fye quantum Monte Carlo algorithm. Results well reproduce
experimental results in the dilute limit. When the chemical potential is
located between the top of the valence band and an impurity bound state, a
long-range ferromagnetic correlations between the impurities, mediated by
antiferromagnetic impurity-host couplings, are drastically developed. We
observe an anisotropic character in local density of states at the
impurity-bound-state energy, which is consistent with the STM measurements. The
presented combined approach thus offers a firm starting point for realistic
calculations of the various family of dilute magnetic semiconductors.Comment: 5 pages, 4 figure
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