7,319 research outputs found
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Activity ageing in growing networks
We present a model for growing information networks where the ageing of a
node depends on the time at which it entered the network and on the last time
it was cited. The model is shown to undergo a transition from a small-world to
large-world network. The degree distribution may exhibit very different shapes
depending on the model parameters, e.g. delta-peaked, exponential or power-law
tailed distributions.Comment: 9 pages, 2 figure
Magnetization Reversal in Elongated Fe Nanoparticles
Magnetization reversal of individual, isolated high-aspect-ratio Fe
nanoparticles with diameters comparable to the magnetic exchange length is
studied by high-sensitivity submicron Hall magnetometry. For a Fe nanoparticle
with diameter of 5 nm, the magnetization reversal is found to be an incoherent
process with localized nucleation assisted by thermal activation, even though
the particle has a single-domain static state. For a larger elongated Fe
nanoparticle with a diameter greater than 10 nm, the inhomogeneous magnetic
structure of the particle plays important role in the reversal process.Comment: 6 pages, 6 figures, to appear in Phys. Rev. B (2005
Spectroscopic determination of hole density in the ferromagnetic semiconductor GaMnAs
The measurement of the hole density in the ferromagnetic semiconductor
GaMnAs is notoriously difficult using standard transport
techniques due to the dominance of the anomalous Hall effect. Here, we report
the first spectroscopic measurement of the hole density in four
GaMnAs samples () at room temperature
using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode
and the unscreened LO phonon. The unscreened LO phonon frequency linearly
decreases as the Mn concentration increases up to 8.3%. The hole density
determined from the Raman scattering shows a monotonic increase with increasing
for , exhibiting a direct correlation to the observed .
The optical technique reported here provides an unambiguous means of
determining the hole density in this important new class of ``spintronic''
semiconductor materials.Comment: two-column format 5 pages, 4 figures, to appear in Physical Review
Star copolymers in porous environments: scaling and its manifestations
We consider star polymers, consisting of two different polymer species, in a
solvent subject to quenched correlated structural obstacles. We assume that the
disorder is correlated with a power-law decay of the pair correlation function
g(x)\sim x^{-a}. Applying the field-theoretical renormalization group approach
in d dimensions, we analyze different scenarios of scaling behavior working to
first order of a double \epsilon=4-d, \delta=4-a expansion. We discuss the
influence of the correlated disorder on the resulting scaling laws and possible
manifestations such as diffusion controlled reactions in the vicinity of
absorbing traps placed on polymers as well as the effective short-distance
interaction between star copolymers.Comment: 13 pages, 3 figure
Duplication-divergence model of protein interaction network
We show that the protein-protein interaction networks can be surprisingly
well described by a very simple evolution model of duplication and divergence.
The model exhibits a remarkably rich behavior depending on a single parameter,
the probability to retain a duplicated link during divergence. When this
parameter is large, the network growth is not self-averaging and an average
vertex degree increases algebraically. The lack of self-averaging results in a
great diversity of networks grown out of the same initial condition. For small
values of the link retention probability, the growth is self-averaging, the
average degree increases very slowly or tends to a constant, and a degree
distribution has a power-law tail.Comment: 8 pages, 13 figure
Exchange interactions and Curie temperature in (GaMn)As
We use supercell and frozen-magnon approaches to study the dependence of the
magnetic interactions in (Ga,Mn)As on the Mn concentration. We report the
parameters of the exchange interaction between Mn spins and the estimates of
the Curie temperature within the mean-field and random-phase approximations. In
agreement with experiment we obtain a nonmonotonous dependence of the Curie
temperature on the Mn concentration. We estimate the dependence of the Curie
temperature on the concentration of the carries in the system and show that the
decrease of the number of holes in the valence band leads to fast decrease of
the Curie temperature. We show that the hole states of the valence band are
more efficient in mediating the exchange interaction between Mn spins than the
electron states of the conduction band
Observation of the spin-charge thermal isolation of ferromagnetic Ga_{0.94}Mn_{0.06}As by time-resolved magneto-optical measurement
The dynamics of magnetization under femtosecond optical excitation is studied
in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved
magneto-optical Kerr effect measurement with two color probe beams. The
transient reflectivity change indicates the rapid rise of the carrier
temperature and relaxation to a quasi-thermal equilibrium within 1 ps, while a
very slow rise of the spin temperature of the order of 500ps is observed. This
anomalous behavior originates from the thermal isolation between the charge and
spin systems due to the spin polarization of carriers (holes) contributing to
ferromagnetism. This constitutes experimental proof of the half-metallic nature
of ferromagnetic Ga_{0.94}Mn_{0.06}As arising from double exchange type
mechanism originates from the d-band character of holes
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