Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica

Observation of the spin-charge thermal isolation of ferromagnetic Ga_{0.94}Mn_{0.06}As by time-resolved magneto-optical measurement

The dynamics of magnetization under femtosecond optical excitation is studied in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved magneto-optical Kerr effect measurement with two color probe beams. The transient reflectivity change indicates the rapid rise of the carrier temperature and relaxation to a quasi-thermal equilibrium within 1 ps, while a very slow rise of the spin temperature of the order of 500ps is observed. This anomalous behavior originates from the thermal isolation between the charge and spin systems due to the spin polarization of carriers (holes) contributing to ferromagnetism. This constitutes experimental proof of the half-metallic nature of ferromagnetic Ga_{0.94}Mn_{0.06}As arising from double exchange type mechanism originates from the d-band character of holes

Phase Separation in A-site Ordered Perovskite Manganite LaBaMn2_2O6_6 Probed by 139^{139}La and 55^{55}Mn NMR

$^{139}$La- and $^{55}$Mn-NMR spectra demonstrate that the ground state of the A-site ordered perovskite manganite LaBaMn$_2$O$_6$ is a spatial mixture of the ferromagnetic (FM) and antiferromagnetic (AFI(CE)) regions, which are assigned to the metallic and the insulating charge ordered state, respectively. This exotic coexisting state appears below 200 K via a first-order-like formation of the AFI(CE) state inside the FM one. Mn spin-spin relaxation rate indicates that the FM region coexisting with the AFI(CE) one in LaBaMn$_2$O$_6$ is identical to the bulk FM phase of the disordered form La$_{0.5}$Ba$_{0.5}$MnO$_3$ in spite of the absence of A-site disorder. This suggests mesoscopic rather than nanoscopic nature of FM region in LaBaMn$_2$O$_6$\@.Comment: 4 pages, 4 figures, to be published in Phys. Rev. Let

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Domain wall dynamics in a single CrO2_2 grain

Recently we have reported on the magnetization dynamics of a single CrO$_2$ grain studied by micro Hall magnetometry (P. Das \textit{et al.}, Appl. Phys. Lett. \textbf{97} 042507, 2010). For the external magnetic field applied along the grain's easy magnetization direction, the magnetization reversal takes place through a series of Barkhausen jumps. Supported by micromagnetic simulations, the ground state of the grain was found to correspond to a flux closure configuration with a single cross-tie domain wall. Here, we report an analysis of the Barkhausen jumps, which were observed in the hysteresis loops for the external field applied along both the easy and hard magnetization directions. We find that the magnetization reversal takes place through only a few configuration paths in the free-energy landscape, pointing to a high purity of the sample. The distinctly different statistics of the Barkhausen jumps for the two field directions is discussed.Comment: JEMS Conference, to appear in J. Phys. Conf. Se