Yキャク フンゴウブ キョウサク オ ガッペイ シタ チョウ コウレイシャ イ ゼンテキ ノ イチレイ

An 88-year-old male patient was referred to our hospital after being diagnosed with gastric cancer during extensive investigations for anemia. The patient underwent total gastrectomy followed by Roux-en Y reconstruction. An esophagus jejunum anastomosis was performed using a Curbed-Shaft Detachable Head Circular Stapler （25 mm）（CDH25）. An anastomosis of the jejunum was performed approximately 40 cm distal to the esophagus jejunum anastomosis using a Straight Shaft Detachable Head Circular Stapler（21 mm）（SDH21）. A seromuscular suture was applied to each anastomotic site. The patient started oral intake on Day 8 after the operation, and was transferred to the urology department on Day 22 for the treatment of renal cancer. Approximately 2 weeks after the transfer, the patient developed fever above 38℃. CT revealed marked enlargement of the duodenum, suggesting stenosis at the Y anastomotic site. The stenosis was successfully treated by endoscopic balloon dilatation without performing. Here, we report a case with favorable outcome

Carrier and heat transport properties of polycrystalline GeSn films on SiO2

We evaluated the potential of polycrystalline (poly-) GeSn as channel material for the fabrication of thin film transistors (TFTs) at a low thermal budget (<600 C). Poly-GeSn films with a grain size of 50 nm showed a carrier mobility of 30 cm2 V -1 s -1 after low-temperature annealing at 475–500 C. Not only carrier mobility but also thermal conductivity of the films is important in assessing the self-heating effect of the poly-GeSn channel TFT. The thermal conductivity of the poly-GeSn films is 5–9 W m-1 K-1, which is significantly lower compared with 30–60 W m-1 K- 1 of bulk Ge; this difference results from phonon scattering at grain boundaries and Sn intersti- tials. The poly-GeSn films have higher carrier mobility and thermal conductivity than poly-Ge films annealed at 600C, because of the improved crystal quality and coarsened grain size resulting from Sn-induced crystallization. Therefore, the poly-GeSn film is well-suited as channel material for TFTs, fabricated with a low thermal budget.status: publishe

Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications

status: publishe

Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex II: Neutron Scattering Instruments

The neutron instruments suite, installed at the spallation neutron source of the Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex (J-PARC), is reviewed. MLF has 23 neutron beam ports and 21 instruments are in operation for user programs or are under commissioning. A unique and challenging instrumental suite in MLF has been realized via combination of a high-performance neutron source, optimized for neutron scattering, and unique instruments using cutting-edge technologies. All instruments are/will serve in world-leading investigations in a broad range of fields, from fundamental physics to industrial applications. In this review, overviews, characteristic features, and typical applications of the individual instruments are mentioned