Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2

State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence

Memcapacitor and Meminductor Circuit Emulators: A Review

This research was funded by the Japanese KAKENHI through Grant Number JP18k04275 and Spanish Ministry of Education, Culture, and Sport (MECD), through Project TEC2017-89955-P and Grant Numbers: FPU16/01451 and FPU16/04043.In 1971, Prof. L. Chua theoretically introduced a new circuit element, which exhibited a different behavior from that displayed by any of the three known passive elements: the resistor, the capacitor or the inductor. This element was called memristor, since its behavior corresponded to a resistor with memory. Four decades later, the concept of mem-elements was extended to the other two circuit elements by the definition of the constitutive equations of both memcapacitors and meminductors. Since then, the non-linear and non-volatile properties of these devices have attracted the interest of many researches trying to develop a wide range of applications. However, the lack of solid-state implementations of memcapacitors and meminductors make it necessary to rely on circuit emulators for the use and investigation of these elements in practical implementations. On this basis, this review gathers the current main alternatives presented in the literature for the emulation of both memcapacitors and meminductors. Different circuit emulators have been thoroughly analyzed and compared in detail, providing a wide range of approaches that could be considered for the implementation of these devices in future designs.Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT) Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research (KAKENHI) JP18k04275Spanish Ministry of Education, Culture, and Sport (MECD) TEC2017-89955-P FPU16/01451 FPU16/0404

Laser-Fabricated Reduced Graphene Oxide Memristors

Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.This work has been supported by the Spanish Ministry of Science, Innovation and Universities/FEDER-EU through the project TEC2017-89955-P, Iberdrola Foundation under its 2018 Research Grant Program, the pre-doctoral grants FPU16/01451, FPU16/04043, and the JSPS KAKENHI through grant number JP18k04275

Dictyostelium discoideumノハッセイカテイニオケルベータ-ガラクトシダーゼニカンスルケンキュウ

京都大学0048新制・論文博士理学博士乙第3222号論理博第557号新制||理||242(附属図書館)5156UT51-52-A822(主査)教授 竹内 郁夫, 教授 皆川 貞一, 教授 黒岩 澄雄学位規則第5条第2項該当Kyoto UniversityDA

fabrication and characterization of capacitive humidity sensors based on emerging flexible technologies

This work presents a case-based comparison between two emerging fabrication techniques for the development of conductive patterns for flexible electronics: inkjet-printing and nanographene production by laser-scribing. In particular, these two methods are used to fabricate planar interdigitated electrode (IDE) capacitors with Kapton® HN polyimide as supporting flexible substrate. Silver-based electrodes are manufactured by inkjet-printing, while a laser-scribing technique is used to obtain laser-reduced graphene oxide (laser-rGO) patterns from deposited graphene oxide (GO) and laser-induced graphene (LIG) layouts from the bare polyimide substrate. The comparison is focused on the application of these IDE capacitors as relative humidity (RH) sensors. The different sensors are benchmarked in terms of sensitivities to RH as well as thermal drift and linearity considering frequency dependencies. The results show that the manufactured capacitors exhibit a very competitive performance as capacitive structures when compared with other similar capacitive sensors from the literature. Furthermore, inkjet-printed and LIG-based capacitors stand out for its thermal stability and linearity

In Situ Characterization of Bias Instability in Bare SOI Wafers by Pseudo-MOSFET Technique

International audienceBias instability is a reliability issue affecting the electrical characteristics of a MOS transistor when the gate is stressed with relatively high voltage. For the first time, we characterize the instability of bare SOI wafers using the pseudo-MOSFET technique. The effect of positive and negative stress pulses on the properties of both hole and electron channels is systematically investigated using measure-stress-measure and on-the-fly methods. The origin of the instability, the dependence of the degradation with time, and the recovery after the stress are discussed

Prospective controlled study on the effects of polyethylene glycol in capsule endoscopy

AIM: To prospectively confirm whether a small amount of polyethylene glycol (PEG) ingested after swallowing endoscopy capsule improves image quality and completion rate

Esophageal Endoscopic Submucosal Dissection Assisted by an Overtube with a Traction Forceps: An Animal Study

Esophageal endoscopic submucosal dissection (ESD) is technically difficult. To make it safer, we developed a novel method using overtube with a traction forceps (OTF) for countertraction during submucosal dissection. We conducted an ex vivo animal study and compared the clinical outcomes between OTF-ESD and conventional method (C-ESD). A total of 32 esophageal ESD procedures were performed by four beginner and expert endoscopists. After circumferential mucosal incision for the target lesion, structured as the isolated pig esophagus 3 cm long, either C-ESD or OTF-ESD was randomly selected for submucosal dissection. All the ESD procedures were completed as en bloc resections, while perforation only occurred in a beginner’s C-ESD procedure. The dissection time for OTF-ESD was significantly shorter than that for C-ESD for both the beginner and expert endoscopists (22.8±8.3 min versus 7.8±4.5 min, P<0.001, and 11.3±4.4 min versus 5.9±2.5 min, P=0.01, resp.). The frequency and volume of the submucosal injections were significantly smaller for OTF-ESD than for C-ESD (1.3±0.6 times versus 2.9±1.5 times, P<0.001, and 5.3±2.8 mL versus 15.6±7.3 mL, P<0.001, resp.). Histologically, muscular injury was more common among the C-ESD procedures (80% versus 13%, P=0.009). Our results indicated that the OTF-ESD technique is useful for the safe and easy completion of esophageal ESD