Semiclassical LpL^p quasimode restriction estimates in two dimensions

We establish the $L^p$ restriction estimates for quasimodes on a smooth curve in two dimensions. Our estimates are sharp for all smooth curves. As an application, we address $L^p$ eigenfunction restriction estimates for Laplace-Beltrami eigenfunctions on $2$-dimensional compact Riemannian manifolds without boundary and Hermite functions on $\mathbb R^2$. Our method involves a geometric analysis of the contact order between the curve and the bicharacteristic flow of the semiclassical pseudodifferential operator.Comment: 42 pages, 2 figure

Uniform stationary phase estimate with limited smoothness

In this paper we consider estimate for oscillatory integrals with stationary phase. First, we consider the uniform stationary estimate which was previously studied by Alazard, Burq, and Zuily and significantly improve the regularity requirement for the phase and amplitude functions. Secondly, we also consider estimate for oscillatory integral of which phase and amplitude depend on the oscillation parameter. Novelty of this article lies in theuse of wave packet decomposition, which turns decay estimate for oscillatory integral into disjointness property of the supports of wave packets. The latter is geometric in its nature and less sensitive to smoothness of the phase and amplitude functions and this enables us to obtain uniform stationary phase estimate under weaker regularity assumption.Comment: 20 page

Sharp Sobolev regularity of a restricted X-ray transform

We study $L^p$-Sobolev regularity estimate for the restricted X-ray transforms generated by a nondegenerate curve. Making use of the inductive strategy in the recent work by the authors, we establish the sharp $L^p$-regularity estimates for the restricted X-ray transform in $\mathbb R^{d+1}$, $d\ge 3$. This extends the result due to Pramanik and Seeger in $\mathbb R^3$ to every dimension. We also obtain $L^p$-Sobolev regularity of the convolution averages over curves with the optimal regularity $\alpha=1/p$ for $p>2(d-1)

Determination of Soil Parameters to Analyze Mechanical Behavior Using Lade's Double-Surface Work-Hardening Model

In this study, Lade's double-surface work-hardening constitutive model was adopted which uses the elasto-plasticity model as a basic conceptual framework. The model can analyze work hardening and work softening of nonlinear stress-strain behavior, and is regarded as superior to other elasto-plasticity constitutive models in terms of estimation. In the double-surface work-hardening constitutive model, 14 soil parameters are needed to estimate soil behaviors. To determine them, laboratory tests—isotropical consolidation test and conventional compression test—were conducted. Determining of soil parameters is highly complicated and time-consuming; randomness cannot be ruled out in determining parameters that are sensitive to stress-strain estimation, and error may occur. For this reason, a linear and nonlinear regression analysis was used to determine soil parameters. In estimation of undrained behavior, the estimated stress-strain behavior based on the two constitutive models largely overlapped with the test results. However, in estimating drained behavior, the outcome of the two models and the test results were mostly the same, but between the two models, the double-surface work-hardening constitutive model had a sharper slope in initial stress state, and a smaller maximum deviatoric stress

Electrical characterizations of solution-processed dielectric layer octamethylcyclotetrasiloxane

Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100 degrees C, 300 degrees C, and 500 degrees C were examined and their dielectric properties were characterized on structures of metal-insulator-silicon (MIS) capacitor and thin film transistor (TFT) with solution-processed zinc-tin-oxide (ZTO) semiconductor. Chemical changes from the UV/ozone oxidation and annealing were analyzed by FIR and XPS. For the 500 degrees C annealed dielectric layer with UV/ozone oxidation, no hysteresis in capacitance-voltage (C-V) measurement was detected having a high dielectric constant (k) of 5.52. The OMTS film can be applicable as a gate dielectric layer towards intensive development of printed electronics. (C) 2014 Elsevier B.V. All rights reserved

Robust ZnO nanoparticle embedded memory device using vancomycin conjugate and its biorecognition for electrical charging node

Conjugation of antibiotic vancomycin (VAN) on nanoparticles (NPs) has recently initiated novel works in the nanobiotechnology field. In this study, a bioelectronic structure using VAN conjugated zinc oxide (ZnO) NPs as charge storing elements on metal-pentacene-insulator-silicon (MPIS) device is demonstrated. Highly specific molecular recognition between the VAN and membrane protein unit mimicked from VAN-resistant bacteria is employed as the formation mechanism of self-assembly monolayers (SAMs) of ZnO NPs. The insulator surface is modified with the VAN cognate peptide of L-Ala-o-Glu-L-Lys-D-Ala-D-Ala by chemical activator coupling. Hysteretic behaviors in capacitance versus voltage (C-V) curves are obtained for the charged ZnO NPs exhibiting flatband voltage shifts, which demonstrate the charge storage on the VAN conjugated ZnO NPs. The potential perspective of this study will be a tangible progress of biomolecular electronics implemented by the interface between biomolecules and electronics. (C) 2013 Elsevier B.V. All rights reserved

Characterization of ITO etching by spontaneously evaporated fume of hydrogen chloride

A simple etching process for indium tin oxide (ITO) film was investigated with atmospheric fume of hydrochloric acid (HCl), which was spontaneously evaporated from HCl solution. The fume etching provided many advantages including simpler process, less extents of undercut, and smaller defects on ITO surface than wet etching. A high etching rate of 50-70 nm/min for ITO film on thermal oxide, glass, and flexible polyethyleneterephthalate substrate was obtained. Surface analyses including X-ray photoelectron spectroscopy and Fourier transform infrared (FIR) spectroscopy suggested that the spontaneously evaporated HCl molecules chemically reacted with ITO and formed water dissolvable etch products. Since the chemical reaction was postulated as a sole source for the etching mechanism, the fume etching would be a suitable process for next-generation flexible electronic applications without any physical damages on substrate. (C) 2012 Elsevier B.V. All rights reserved

Organic memory device with polyaniline nanoparticles embedded as charging elements

Polyaniline nanoparticles (PANI NPs) were synthesized and fabricated as charging elements for organic memory devices. The PANI NPs charging layer was self-assembled by epoxy-amine bonds between 3-glycidylpropyl trimethoxysilane functionalized dielectrics and PANI NPs. A memory window of 5.8V (Delta V-FB) represented by capacitance-voltage hysteresis was obtained for metal-pentacene-insulator-silicon capacitor. In addition, program/erase operations controlled by gate bias (-/+90 V) were demonstrated in the PANI NPs embedded pentacene thin film transistor device with polyvinylalcohol dielectric on flexible polyimide substrate. These results can be extended to development of fully organic-based electronic device. (C) 2012 American Institute of Physics. [http://dx.doi.org.openlink.unist.ac.kr:8080/10.1063/1.4704571