478 research outputs found
Spin noise spectroscopy in GaAs
We observe the noise spectrum of electron spins in bulk GaAs by Faraday
rotation noise spectroscopy. The experimental technique enables the undisturbed
measurement of the electron spin dynamics in semiconductors. We measure
exemplarily the electron spin relaxation time and the electron Lande g-factor
in n-doped GaAs at low temperatures and find good agreement of the measured
noise spectrum with an unpretentious theory based on Poisson distribution
probability.Comment: 4 pages, 4 figure
Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As
quantum wells grown on (110) oriented substrate. The spin lifetime of spins
perpendicular to the growth direction is about one order of magnitude shorter
compared to spins along (110). The spin lifetimes of both spin orientations
decrease monotonically above a temperature of 80 and 120 K, respectively. The
decrease is very surprising for spins along (110) direction and cannot be
explained by the usual Dyakonov Perel dephasing mechanism. A novel spin
dephasing mechanism is put forward that is based on scattering of electrons
between different quantum well subbands.Comment: 4 pages, 3 postscript figures, corrected typo
Towards bose-einstein condensation of semiconductor excitons: The biexciton polarization effect
We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells. © 2009 The American Physical Society
Temperature-dependent electron Landé g factor and the interband matrix element of GaAs
Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k⋅p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters. © 2009 The American Physical Society
Electron spin orientation under in-plane optical excitation in GaAs quantum wells
We study the optical orientation of electron spins in GaAs/AlGaAs quantum
wells for excitation in the growth direction and for in-plane excitation. Time-
and polarization-resolved photoluminescence excitation measurements show, for
resonant excitation of the heavy-hole conduction band transition, a negligible
degree of electron spin polarization for in-plane excitation and nearly 100%
for excitation in the growth direction. For resonant excitation of the
light-hole conduction band transition, the excited electron spin polarization
has the same (opposite) direction for in-plane excitation (in the growth
direction) as for excitation into the continuum. The experimental results are
well explained by an accurate multiband theory of excitonic absorption taking
fully into account electron-hole Coulomb correlations and heavy-hole light-hole
coupling.Comment: 10 pages, 4 figures, final versio
Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
We have measured the electron spin relaxation rate and the integrated spin
noise power in n-doped GaAs for temperatures between 4 K and 80 K and for
doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16}
cm^{-3} using spin noise spectroscopy. The temperature dependent measurements
show a clear transition from localized to free electrons for the lower doped
samples and confirm mainly free electrons at all temperatures for the highest
doped sample. While the sample at the metal-insulator-transition shows the
longest spin relaxation time at low temperatures, a clear crossing of the spin
relaxation rates is observed at 70 K and the highest doped sample reveals the
longest spin relaxation time above 70 K.Comment: 6 pages, 4 figure
Traces of stimulated bosonic exciton-scattering in semiconductor luminescence
We observe signatures of stimulated bosonic scattering of excitons, a
precursor of Bose-Einstein-Condensation (BEC), in the photoluminescence of
semiconductor quantum wells. The optical decay of a spinless molecule of two
excitons (biexciton) into an exciton and a photon with opposite angular momenta
is subject to bosonic enhancement in the presence of other excitons. In a spin
polarized gas of excitons the bosonic enhancement breaks the symmetry of two
equivalent decay channels leading to circularly polarized luminescence of the
biexciton with the sign opposite to the excitonic luminescence. Comparison of
experiment and many body theory proves stimulated scattering of excitons, but
excludes the presence of a fully condensed BEC-like state.Comment: 5 page
Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells
Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Γs and the electron Landé g factor g* to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D2d → C2v). However, by looking at the anisotropy of both Γs and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest. © 2013 American Physical Society
Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices
We investigate the emission of multimodal polarized light from Light Emitting
Devices due to spin-aligned carriers injection. The results are derived through
operator Langevin equations, which include thermal and carrier-injection
fluctuations, as well as non-radiative recombination and electronic g-factor
temperature dependence. We study the dynamics of the optoelectronic processes
and show how the temperature-dependent g-factor and magnetic field affect the
polarization degree of the emitted light. In addition, at high temperatures,
thermal fluctuation reduces the efficiency of the optoelectronic detection
method for measuring spin-polarization degree of carrier injection into
non-magnetic semicondutors.Comment: 15 pages, 7 figures, replaced by revised version. To appear in Phys.
Rev.
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