2 research outputs found
Highly Conductive Cu<sub>2ā<i>x</i></sub>S Nanoparticle Films through Room-Temperature Processing and an Order of Magnitude Enhancement of Conductivity via Electrophoretic Deposition
A facile room-temperature method
for assembling colloidal copper sulfide (Cu<sub>2ā<i>x</i></sub>S) nanoparticles into highly electrically conducting films
is presented. Ammonium sulfide is utilized for connecting the nanoparticles
via ligand removal, which transforms the as-deposited insulating films
into highly conducting films. Electronic properties of the treated
films are characterized with a combination of Hall effect measurements,
field-effect transistor measurements, temperature-dependent conductivity
measurements, and capacitanceāvoltage measurements, revealing
their highly doped p-type semiconducting nature. The spin-cast nanoparticle
films have carrier concentration of ā¼10<sup>19</sup> cm<sup>ā3</sup>, Hall mobilities of ā¼3 to 4 cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup>, and electrical conductivities
of ā¼5 to 6 SĀ·cm<sup>ā1</sup>. Our films have hole
mobilities that are 1ā4 orders of magnitude higher than hole
mobilities previously reported for heat-treated nanoparticle films
of HgTe, InSb, PbS, PbTe, and PbSe. We show that electrophoretic deposition
(EPD) as a method for nanoparticle film assembly leads to an order
of magnitude enhancement in film conductivity (ā¼75 SĀ·cm<sup>ā1</sup>) over conventional spin-casting, creating copper
sulfide nanoparticle films with conductivities comparable to bulk
films formed through physical deposition methods. The X-ray diffraction
patterns of the Cu<sub>2ā<i>x</i></sub>S films, with
and without ligand removal, match the Djurleite phase (Cu<sub>1.94</sub>S) of copper sulfide and show that the nanoparticles maintain finite
size after the ammonium sulfide processing. The high conductivities
reported are attributed to better interparticle coupling through the
ammonium sulfide treatment. This approach presents a scalable room-temperature
route for fabricating highly conducting nanoparticle assemblies for
large-area electronic and optoelectronic applications
Direct Measurements of Surface Scattering in Si Nanosheets Using a Microscale Phonon Spectrometer: Implications for Casimir-Limit Predicted by Ziman Theory
Thermal
transport in nanostructures is strongly affected by phonon-surface
interactions, which are expected to depend on the phononās
wavelength and the surface roughness. Here we fabricate silicon nanosheets,
measure their surface roughness (ā¼1 nm) using atomic force
microscopy (AFM), and assess the phonon scattering rate in the sheets
with a novel technique: a microscale phonon spectrometer. The spectrometer
employs superconducting tunnel junctions (STJs) to produce and detect
controllable nonthermal distributions of phonons from ā¼90 to
ā¼870 GHz. This technique offers spectral resolution nearly
10 times better than a thermal conductance measurement. We compare
measured phonon transmission rates to rates predicted by a Monte Carlo
model of phonon trajectories, assuming that these trajectories are
dominated by phonon-surface interactions and using the Ziman theory
to predict phonon-surface scattering rates based on surface topology.
Whereas theory predicts a diffuse surface scattering probability
of less than 40%, our measurements are consistent with a 100% probability.
Our nanosheets therefore exhibit the so-called āCasimir limitā
at a much lower frequency than expected if the phonon scattering rates
follow the Ziman theory for a 1 nm surface roughness. Such a result
holds implications for thermal management in nanoscale electronics
and the design of nanostructured thermoelectrics