Interferometry of hyper-Rayleigh scattering by inhomogeneous thin films

The use of specific symmetry properties of the optical second-harmonic generation (the s,s-exclusion rule) has allowed us to observe high-contrast hyper-Rayleigh interference patterns in a completely diffuse light - an effect having no analog in case of linear (Rayleigh) scattering.Comment: 8 pages, 3 figure

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO2_2 interfaces

The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.Comment: 31 pages, 14 figures, 1 table, figures are also available at http://kali.ilc.msu.su/articles/50/efish.ht

Optical second harmonic generation probe of two-dimensional ferroelectricity

Optical second harmonic generation (SHG) is used as a noninvasive probe of two-dimensional (2D) ferroelectricity in Langmuir-Blodgett (LB) films of copolymer vinylidene fluoride with trifluorethylene. The surface 2D ferroelectric-paraelectric phase transition in the topmost layer of LB films and a thickness independent (almost 2D) transition in the bulk of these films are observed in temperature studies of SHG.Comment: 9 pages, 2 figures, Optics Letters, in prin

Surface-enhanced optical third-harmonic generation in Ag island films

Surface-enhanced optical third-harmonic generation (THG) is observed in silver island films. The THG intensity from Ag nanoparticles is enhanced by more than two orders of magnitude with respect to the THG intensity from a smooth and homogeneous silver surface. This enhancement is attributed to local plasmon excitation and resonance of the local field at the third-harmonic wavelength. The diffuse and depolarized component of the enhanced THG is associated with the third-order hyper-Rayleigh scattering in a 2-D random array of silver nanoparticles.Comment: 4 pages, 2 figure

Borrmann Effect in Photonic Crystals: Nonlinear Optical Consequences

Nonlinear-optical manifestations of the Borrmann effect that are consequences of the spectral dependence of the spatial distributions of the electromagnetic field in a structure are observed in one-dimensional photonic crystals. The spectrum of the light self-focusing effect corresponding to the propagation-matrix calculations has been measured near the edge of the photonic gap.Comment: 4 pages, 3 figures, published in russian at Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, 2008, Vol. 87, No. 8, pp. 461-46