Rotation Symmetry Spontaneous Breaking of Edge States in Zigzag Carbon Nanotubes

Analytical solutions of the edge states were obtained for the (N, 0) type carbon nanotubes with distorted ending bonds. It was found that the edge states are mixed via the distortion. The total energies for N=5 and N>=7 are lower in the asymmetric configurations of ending bonds than those having axial rotation symmetry. Thereby the symmetry is breaking spontaneously. The results imply that the symmetry of electronic states at the apex depends on the occupation; the electron density pattern at the apex could change dramatically and could be controlled by applying an external field.Comment: 19 pages, 3 figure

Low-energy electron transmission in a partially unzipped zigzag nanotube

Based on the nearest-neighbor tight-binding approximation, we present exact analytical expressions for electron transmission in nanotube/ribbon junctions, generated by incomplete unzipping of zigzag nanotubes. By assuming one-dimer-line difference in the widths of the leads, it is demonstrated that such a contact exhibits zero backscattering of low-energy electrons entering from the graphene side of the junction. We also show that a zigzag nanotube section sandwiched between two armchair graphene ribbons is completely transparent for incident low-energy electrons. Possible application of the results to nanosensor engineering is also included. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Low-energy electron transport in semimetal graphene ribbon junctions

72.10.-d Theory of electronic transport; scattering mechanisms, 73.63.-b Electronic transport in nanoscale materials and structures, 73.63.Nm Quantum wires, 73.63.Rt Nanoscale contacts,

Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons

raphene has attracted much interest in both academia and industry. The challenge of making it semiconducting is crucial for applications in electronic devices. A promising approach is to reduce its physical size down to the nanometer scale. Here, we present the surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures. STM/STS measurements reveal their associated electron scattering patterns and the energy gaps over 1 eV. The mechanism to form such AGNRs is addressed based on the observed intermediate products. Our results provide new insights into the local properties of AGNRs, and have implications for the understanding of their electrical properties and potential applications

CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths