Operation modes of battery chargers for electric vehicles in the future smart grids

This paper presents an on-board bidirectional battery charger for Electric Vehicles (EVs), which operates in three different modes: Grid-to- Vehicle (G2V), Vehicle-to-Grid (V2G), and Vehicle-to-Home (V2H). Through these three operation modes, using bidirectional communications based on Information and Communication Technologies (ICT), it will be possible to exchange data between the EV driver and the future smart grids. This collaboration with the smart grids will strengthen the collective awareness systems, contributing to solve and organize issues related with energy resources and power grids. This paper presents the preliminary studies that results from a PhD work related with bidirectional battery chargers for EVs. Thus, in this paper is described the topology of the on-board bidirectional battery charger and the control algorithms for the three operation modes. To validate the topology it was developed a laboratory prototype, and were obtained experimental results for the three operation modes.FEDER Funds, through the Operational Programme for Competitiveness Factors – COMPETE, and by National Funds through FCT – Foundation for Science and Technology of Portugal, under the project FCOMP-01-0124- FEDER-022674, and QREN project AAC n.º36/SI/2009 – 1384

Abnormal Myocardial Contractility After Pediatric Heart Transplantation by Cardiac MRI

Cardiolog

ALD La-based oxides for vt-tuning in high-k/metal gate stacks

Accurate thickness and composition control for ultra-thin films is demonstrated for the atomic layer deposition (ALD) of La2O 3 and HfLaO. Growth studies indicate a linear growth without substrate inhibition for La2O3 and HfLaO ALD on HfSiO and hydroxylated SiO2, respectively. Layer closure studies on HfSiO show a fast La2O3 layer closure. Vt-tuning in a high thermal budget NMOS transistor flow is established (i) by inserting sub-nm La2O3 capping layers between the HfSiON gate oxide and the TaCx metal electrode and (ii) by replacing the HfSiON gate oxide film by HfLaO. Changing the La2O3 capping layer thickness from 0 till 1 nm, results in tunable Vtshifts up to ∼ 600mV while retaining low equivalent oxide thickness (EOT), high mobility, and low gate leakage current. Hf-rich HfLaO gate dielectric layers resulted in a V t-shift of ∼ 250 mV and EOT values down to 1.1 nm. © The Electrochemical Society