One-Step Process for High-Performance, Adhesive, Flexible Transparent Conductive Films Based on p‑Type Reduced Graphene Oxides and Silver Nanowires

This work demonstrates a one-step process to synthesize uniformly dispersed hybrid nanomaterial containing silver nanowires (AgNWs) and p-type reduced graphene (p-rGO). The hybrid nanomaterial was coated onto a polyethylene terephthalate (PET) substrate for preparing high-performance flexible transparent conductive films (TCFs). The p-rGO plays the role of bridging discrete AgNWs, providing more electron holes and lowering the resistance of the contacted AgNWs; therefore, enhancing the electrical conductivity without sacrificing too much transparence of the TCFs. Additionally, the p-rGO also improves the adhesion between AgNWs and substrate by covering the AgNWs on the substrate tightly. The study shows that coating of the hybrid nanomaterials on the PET substrate demonstrates exceptional optoelectronic properties with a transmittance of 94.68% (at a wavelength of 550 nm) and a sheet resistance of 25.0 ± 0.8 Ω/sq. No significant variation in electric resistance can be detected even when the film was subjected to a bend loading with a radius of curvature of 5.0 mm or the film was loaded with a reciprocal tension or compression for 1000 cycles. Furthermore, both chemical corrosion resistance and haze effect were improved when p-rGO was introduced. The study shows that the fabricated flexible TCFs have the potential to replace indium tin oxide film in the optoelectronic industry

Enhancing the Electrical Properties of a Flexible Transparent Graphene-Based Field-Effect Transistor Using Electropolished Copper Foil for Graphene Growth

Flexible transparent graphene-based field-effect transistors (Gr-FETs) were fabricated using large-area single-layer graphene synthesized through low-pressure chemical vapor deposition on a pretreated copper (Cu) foil, followed by transfer of the graphene from the Cu foil to a poly­(ethylene terephthalate) (PET) substrate. The electropolishing method was adopted to smooth the surface of the Cu foil, which is a crucial factor because it affects the defect density of graphene films on the PET substrate after transfer and the electronic transport property of the graphene-based devices. The influence of the electropolishing process on the graphene properties was examined using a Raman spectroscope, a scanning electron microscope, and an optical microscope. When the electropolishing process was adopted to improve the graphene quality, the carrier mobility of the flexible transparent Gr-FETs was enhanced from 90 to 340 cm²/(V s). Furthermore, variation of the carrier mobility was lower than 10% when the bending radius of the flexible device was decreased from 6.0 to 1.0 cm

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl₄/H₂ mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10²⁰ cm^–3 for P-doped Si film and 7.83 S/cm and 1.5 × 10²⁰ cm^–3 for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/<i>n</i>-type Si film/<i>i</i>-type Si film/<i>p</i>-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm², fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (<i>R</i>_C) was 12.4 mm, and the loss of efficiency was less than1% after the cyclic bending test for 100 cycles at <i>R</i>_C, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based photovoltaic devices

Fast Process To Decorate Silver Nanoparticles on Carbon Nanomaterials for Preparing High-Performance Flexible Transparent Conductive Films

This work demonstrates a fast process to decorate silver (Ag) nanoparticles onto the functionalized few-walled carbon nanotubes (f-FWCNTs) and graphene nanosheets (f-GNs). The Ag-coated carbon nanomaterials were used as fillers, which mixed with poly­(3,4-ethylenedioxythiophene)–poly­(4-stryensulfonate) (PEDOT:PSS) for preparing high optoelectronic performances of flexible transparent conductive films (TCFs). The Ag nanoparticles with a particle size of approximate 5 nm were uniformly distributed on the surfaces of the f-FWCNTs (Ag@f-FWCNTs) and the f-GNs (Ag@f-GNs). The Ag ions play the role of electron acceptors during the reduction process, which increases the hole concentrations in PEDOT:PSS, f-FWCNTs, and f-GNs, therefore enhancing the electrical conductivity of the TCFs. Additionally, the Schottky barrier was decreased because of the increase of work functions of the carbon fillers caused by Ag decoration. The X-ray diffraction spectrum of Ag@f-GNs depicts the formations of the face-centered cubic Ag nanoparticles, and the peak of the (002) graphene plane slightly shifted to the lower frequency, indicating that the f-GN interlayer was intercalated with Ag ions or Ag nanoparticles. When the mixture of 2.0 wt % Ag@f-FWCNTs and 8.0 wt % Ag@f-GNs containing PEDOT:PSS dispersant was coated onto a poly­(ethylene terephthalate) (PET) substrate, outstanding optoelectronic properties with a sheet resistance of 50.3 Ω/sq and a transmittance of 79.73% at a wavelength of 550 nm were achieved

High Mobility of Graphene-Based Flexible Transparent Field Effect Transistors Doped with TiO₂ and Nitrogen-Doped TiO₂

Graphene with carbon atoms bonded in a honeycomb lattice can be tailored by doping various species to alter the electrical properties of the graphene for fabricating p-type or n-type field-effect transistors (FETs). In this study, large-area and single-layer graphene was grown on electropolished Cu foil using the thermal chemical vapor deposition method; the graphene was then transferred onto a poly­(ethylene terephthalate) (PET) substrate to produce flexible, transparent FETs. TiO₂ and nitrogen-doped TiO₂ (N-TiO₂) nanoparticles were doped on the graphene to alter its electrical properties, thereby enhancing the carrier mobility and enabling the transistors to sense UV and visible light optically. The results indicated that the electron mobility of the graphene was 1900 cm²/(V·s). Dopings of TiO₂ and N-doped TiO₂ (1.4 at. % N) lead to n-type doping effects demonstrating extremely high carrier mobilities of 53000 and 31000 cm²/(V·s), respectively. Through UV and visible light irradiation, TiO₂ and N-TiO₂ generated electrons and holes; the generated electrons transferred to graphene channels, causing the FETs to exhibit n-type electric behavior. In addition, the Dirac points of the graphene recovered to their original state within 5 min, confirming that the graphene-based FETs were photosensitive to UV and visible light. In a bending state with a radius of curvature greater than 2.0 cm, the carrier mobilities of the FETs did not substantially change, demonstrating the application possibility of the fabricated graphene-based FETs in photosensors

Heterogranular-Structured Diamond–Gold Nanohybrids: A New Long-Life Electronic Display Cathode

In the age of hand-held portable electronics, the need for robust, stable and long-life cathode materials has become increasingly important. Herein, a novel heterogranular-structured diamond–gold nanohybrids (HDG) as a long-term stable cathode material for field-emission (FE) display and plasma display devices is experimentally demonstrated. These hybrid materials are electrically conductive that perform as an excellent field emitters, viz. low turn-on field of 2.62 V/μm with high FE current density of 4.57 mA/cm² (corresponding to a applied field of 6.43 V/μm) and prominently high lifetime stability lasting for 1092 min revealing their superiority on comparison with the other commonly used field emitters such as carbon nanotubes, graphene, and zinc oxide nanorods. The process of fabrication of these HDG materials is direct and easy thereby paving way for the advancement in next generation cathode materials for high-brightness FE and plasma-based display devices

Enhanced Electron Field Emission Properties of Conducting Ultrananocrystalline Diamond Films after Cu and Au Ion Implantation

The effects of Cu and Au ion implantation on the structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were investigated. High electrical conductivity of 186 (Ω•cm)^‑1 and enhanced EFE properties with low turn-on field of 4.5 V/μm and high EFE current density of 6.70 mA/cm² have been detected for Au-ion implanted UNCD (Au-UNCD) films that are superior to those of Cu-ion implanted UNCD (Cu-UNCD) ones. Transmission electron microscopic investigations revealed that Au-ion implantation induced a larger proportion of nanographitic phases at the grain boundaries for the Au-UNCD films in addition to the formation of uniformly distributed spherically shaped Au nanoparticles. In contrast, for Cu-UNCD films, plate-like Cu nanoparticles arranged in the row-like pattern were formed, and only a smaller proportion of nanographite phases along the grain boundaries was induced. From current imaging tunneling spectroscopy and local current–voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the presence of nanosized Au particles and the induction of abundant nanographitic phases in the grain boundaries of Au-UNCD films are believed to be the authentic factors, ensuing in high electrical conductivity and outstanding EFE properties of the films

Investigations on Diamond Nanostructuring of Different Morphologies by the Reactive-Ion Etching Process and Their Potential Applications

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O₂/CF₄ process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N₂-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp²-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film

Role of Carbon Nanotube Interlayer in Enhancing the Electron Field Emission Behavior of Ultrananocrystalline Diamond Coated Si-Tip Arrays

We improved the electron field emission properties of ultrananocrystalline diamond (UNCD) films grown on Si-tip arrays by using the carbon nanotubes (CNTs) as interlayer and post-treating the films in CH₄/Ar/H₂ plasma. The use of CNTs interlayer effectively suppresses the presence of amorphous carbon in the diamond-to-Si interface that enhances the transport of electrons from Si, across the interface, to diamond. The post-treatment process results in hybrid-granular-structured diamond (HiD) films via the induction of the coalescence of the ultrasmall grains in these films that enhanced the conductivity of the films. All these factors contribute toward the enhancement of the electron field emission (EFE) process for the HiD_CNT/Si‑tip emitters, with low turn-on field of <i>E</i>₀ = 2.98 V/μm and a large current density of 1.68 mA/cm² at an applied field of 5.0 V/μm. The EFE lifetime stability under an operation current of 6.5 μA was improved substantially to τ_{HiD/CNT/Si‑tip} = 365 min. Interestingly, these HiD_CNT/Si‑tip materials also show enhanced plasma illumination behavior, as well as improved robustness against plasma ion bombardment when they are used as the cathode for microplasma devices. The study concludes that the use of CNT interlayers not only increase the potential of these materials as good EFE emitters, but also prove themselves to be good microplasma devices with improved performance

Macroscopic, Freestanding, and Tubular Graphene Architectures Fabricated <i>via</i> Thermal Annealing

Manipulation of individual graphene sheets/films into specific architectures at macroscopic scales is crucially important for practical uses of graphene. We present herein a versatile and robust method based on annealing of solid carbon precursors on nickel templates and thermo-assisted removal of poly(methyl methacrylate) under low vacuum of ∼0.6 Pa for fabrication of macroscopic, freestanding, and tubular graphene (TG) architectures. Specifically, the TG architectures can be obtained as individual and woven tubes with a diameter of ∼50 μm, a wall thickness in the range of 2.1–2.9 nm, a density of ∼1.53 mg·cm^–3, a thermal stability up to 600 °C in air, an electrical conductivity of ∼1.48 × 10⁶ S·m^–1, and field emission current densities on the order of 10⁴ A·cm^–2 at low applied electrical fields of 0.6–0.7 V·μm^–1. These properties show great promise for applications in flexible and lightweight electronics, electron guns, or X-ray tube sources