8 research outputs found
Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions
Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides
were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat-
ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans-
mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu-
tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con-
centration and pulsed treatment conditions were determined
Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions
Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides
were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat-
ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans-
mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu-
tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con-
centration and pulsed treatment conditions were determined
Formation of Light Emitting Iron Disilicide/Silicon Heterostructures by Means of Pulsed Ion and Laser Beams
Abstract – Semiconducting iron disilicide (β FeSi2) is a pro
mising material for the fabrication of Si based structures
emitting light in the 1.5–1.6 μm telecommunication range.
In this work β FeSi2/Si heterostructures were formed by
high fluence implantation of n Si (100) single crystals with
iron ions (Fe+) followed by treatments of the implanted Si la
yers with pulsed laser or ion beams. Structural properties of
the obtained heterostructures were studied by X ray diffrac
tion, transmission electron microscopy and Rutherford
backscattering spectrometry. It is shown that pulsed treat
ment leads to the formation of nanocrystalline FeSi2 layers
with a cellular structure and nearly uniform composition. On
the base of β FeSi2/Si layers, light emitting in the near in
frared region p+–Si/β FeSi2/n–Si/n+–Si diode structures
were obtained by the implantation of low energy boron and
phosphorous ions