Predictability of reset switching voltages in unipolar resistance switching

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations

A decentralized proportional-integral sliding mode tracking controller for a 2 D.O.F robot arm

Trajectory tracking with high accuracy is a very challenging topic in direct drive robot control. This is due to the nonlinearities and input couplings present in the dynamics of the arm. This paper deals with the tracking control of a class of direct-drive robot manipulators. A robust Proportional-Integral (PI) sliding mode control law is derived so that the robot trajectory tracks a desired trajectory as closely as possible despite the highly non-linear and coupled dynamics. The controller is designed using the decentralized approaches. Application to a two degree of freedom direct drive robot arm is considered

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.Comment: 3 figures, supplemental materia

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. We found that the number of nuclei is linearly proportional to log(switching time), suggesting a broad distribution of activation energies for nucleation. The nucleation sites for a positive bias differ from those for a negative bias, indicating that most nucleation sites are located at ferroelectric/electrode interfaces

Bandwidth-Controlled Insulator-Metal Transition and Correlated Metallic State in 5dd Transition Metal Oxides Srn+1_{n+1}Irn_{n}O3n+1_{3n+1} (nn=1, 2, and ∞\infty)

We investigated the electronic structures of the 5$d$ Ruddlesden-Popper series Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n$=1, 2, and $\infty$) using optical spectroscopy and first-principles calculations. As 5$d$ orbitals are spatially more extended than 3$d$ or 4$d$ orbitals, it has been widely accepted that correlation effects are minimal in 5$d$ compounds. However, we observed a bandwidth-controlled transition from a Mott insulator to a metal as we increased $n$. In addition, the artificially synthesized perovskite SrIrO$_{3}$ showed a very large mass enhancement of about 6, indicating that it was in a correlated metallic state