3,106 research outputs found
Finite-size scaling theory for explosive percolation transitions
The finite-size scaling (FSS) theory for continuous phase transitions has
been useful in determining the critical behavior from the size dependent
behaviors of thermodynamic quantities. When the phase transition is
discontinuous, however, FSS approach has not been well established yet. Here,
we develop a FSS theory for the explosive percolation transition arising in the
Erd\H{o}s and R\'enyi model under the Achlioptas process. A scaling function is
derived based on the observed fact that the derivative of the curve of the
order parameter at the critical point diverges with system size in a
power-law manner, which is different from the conventional one based on the
divergence of the correlation length at . We show that the susceptibility
is also described in the same scaling form. Numerical simulation data for
different system sizes are well collapsed on the respective scaling functions.Comment: 5 pages, 5 figure
Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films
High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low
oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane
asymmetric atomic arrangements at the substrate surface allowed us to grow
epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with
quite different a- and b-axes lattice constants. The YTiO3 film exhibited a
clear ferromagnetic transition at 30 K with a saturation magnetization of about
0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of
the substrate, which differs from the single crystal easy axis direction, i.e.,
[001].Comment: 14 pages, 4 figure
In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD
Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology
Magnetic Field Induced Insulating Phases at Large
Exploring a backgated low density two-dimensional hole sample in the large
regime we found a surprisingly rich phase diagram. At the highest
densities, beside the , 2/3, and 2/5 fractional quantum Hall states,
we observe both of the previously reported high field insulating and reentrant
insulating phases. As the density is lowered, the reentrant insulating phase
initially strengthens, then it unexpectedly starts weakening until it
completely dissapears. At the lowest densities the terminal quantum Hall state
moves from to . The intricate behavior of the insulating
phases can be explained by a non-monotonic melting line in the -
phase space
Extended Universality of the Surface Curvature in Equilibrium Crystal Shapes
We investigate the universal property of curvatures in surface models which
display a flat phase and a rough phase whose criticality is described by the
Gaussian model. Earlier we derived a relation between the Hessian of the free
energy and the Gaussian coupling constant in the six-vertex model. Here we show
its validity in a general setting using renormalization group arguments. The
general validity of the relation is confirmed numerically in the RSOS model by
comparing the Hessian of the free energy and the Gaussian coupling constant in
a transfer matrix finite-size-scaling study. The Hessian relation gives clear
understanding of the universal curvature jump at roughening transitions and
facet edges and also provides an efficient way of locating the phase
boundaries.Comment: 19 pages, RevTex, 3 Postscript Figures, To appear in Phys. Rev.
In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD
Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology
Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors
under a modified piezoresponse force microscope. We obtained domain evolution
images during polarization switching process and observed that domain
nucleation occurs at particular sites. This inhomogeneous nucleation process
should play an important role in an early stage of switching and under a high
electric field. We found that the number of nuclei is linearly proportional to
log(switching time), suggesting a broad distribution of activation energies for
nucleation. The nucleation sites for a positive bias differ from those for a
negative bias, indicating that most nucleation sites are located at
ferroelectric/electrode interfaces
Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures
We have found that there is more than one type of conducting carriers
generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier
density and mobility from optical transmission spectroscopy with those from
dc-transport measurements. When multiple types of carriers exist, optical
characterization dominantly reflects the contribution from the high-density
carriers whereas dc-transport measurements may exaggerate the contribution of
the high-mobility carriers even though they are present at low-density. Since
the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3
heterostructures are much higher than those extracted by optical method, we
attribute the origin of high-mobility transport to the low-density conducting
carriers.Comment: 3 figures, supplemental materia
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