Field effect transistors for terahertz detection - silicon versus III–V material issue

International audienceResonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs

Resonance effects in the Raman scattering of monolayer and few-layer MoSe2

Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of monolayer and multilayer 2H-molybdenum diselenide (MoSe2) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E-symmetry type phonons present resonances with A and B excitons of MoSe2 together with a marked increase of intensity when exciting at higher energy, close to the C-exciton energy. We observe symmetry-dependent exciton-phonon coupling affecting mainly the low-energy rigid layer phonon modes. The shear mode for multilayer displays a pronounced resonance with the C exciton while the breathing mode has an intensity that grows with the excitation laser energy, indicating a resonance with electronic excitations at energies higher than that of the C exciton.Fil: Soubelet, Pedro Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Bruchhausen, Axel Emerico. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Fainstein, Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Nogajewski, N.. Centre National de la Recherche Scientifique; FranciaFil: Faugeras, C.. Centre National de la Recherche Scientifique; Franci

Single photon emitters in exfoliated WSe2 structures

International audienc