Imaging individual barium atoms in solid xenon for barium tagging in nEXO

© 2019, The Author(s), under exclusive licence to Springer Nature Limited. Double-β-decay involves the simultaneous conversion of two neutrons into two protons, and the emission of two electrons and two neutrinos; the neutrinoless process, although not yet observed, is thought to involve the emission of the two electrons but no neutrinos. The search for neutrinoless-double-β-decay probes fundamental properties of neutrinos, including whether or not the neutrino and antineutrino are distinct particles. Double-β-decay detectors are large and expensive, so it is essential to achieve the highest possible sensitivity with each study, and removing spurious contributions (‘background’) from detected signals is crucial. In the nEXO neutrinoless-double-β-decay experiment, the identification, or ‘tagging’, of the 136 Ba daughter atom resulting from the double-β decay of 136 Xe provides a technique for discriminating background. The tagging scheme studied here uses a cryogenic probe to trap the barium atom in a solid xenon matrix, where the barium atom is tagged through fluorescence imaging. Here we demonstrate the imaging and counting of individual barium atoms in solid xenon by scanning a focused laser across a solid xenon matrix deposited on a sapphire window. When the laser irradiates an individual atom, the fluorescence persists for about 30 seconds before dropping abruptly to the background level—a clear confirmation of one-atom imaging. Following evaporation of a barium deposit, the residual barium fluorescence is 0.16 per cent or less. Our technique achieves the imaging of single atoms in a solid noble element, establishing the basic principle of barium tagging for nEXO11Nsciescopu

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

© 2020 IOP Publishing Ltd and Sissa Medialab. Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μm micro-cells conducted with xenon scintillation light (∼175 nm) in liquid xenon. The specular reflectivity at 15ˆ incidence of three samples of VUV4 SiPMs is found to be 30.4±1.4%, 28.6±1.3%, and 28.0±1.3%, respectively. The PDE at normal incidence differs by ±8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon11Nsciescopu

Characterization of the Hamamatsu VUV4 MPPCs for nEXO

© 2019 Elsevier B.V.In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Multi-Pixel Photon Counters (MPPC)s as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various MPPC features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. MPPCs were characterized in the range 163K≤T≤233K. At an over voltage of 3.1±0.2 V and at T=163K we report a number of Correlated Avalanches (CAs) per pulse in the 1μs interval following the trigger pulse of 0.161±0.005. At the same settings the Dark-Noise (DN) rate is 0.137±0.002Hz/mm2. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at T=233K for a mean wavelength of 189±7nm. At 3.6±0.2 V and 3.5±0.2 V of over voltage we report a PDE of 13.4±2.6% and 11±2%, corresponding to a saturation PDE of 14.8±2.8% and 12.2±2.3%, respectively. Both values are well below the 24% saturation PDE advertised by Hamamatsu. More generally, the second device tested at 3.5±0.2 V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF Silicon Photo-Multipliers for the final design of the nEXO detector11sciescopu

Measurements of electron transport in liquid and gas Xenon using a laser-driven photocathode

© 2020 Published by Elsevier B.V. Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semi-transparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser. The charges drift and diffuse in a small chamber at various electric fields and a fixed drift distance of 2.0 cm. At an electric field of 0.5 kV/cm, the measured drift velocities and corresponding temperature coefficients respectively are 1.97±0.04mm∕μs and (−0.69±0.05)%/K for liquid xenon, and 1.42±0.03mm∕μs and (+0.11±0.01)%/K for gaseous xenon at 1.5 bar. In addition, we measure longitudinal diffusion coefficients of 25.7±4.6 cm2/s and 149±23 cm2/s, for liquid and gas, respectively. The quantum efficiency of the gold photocathode is studied at the photon energy of 4.73 eV in liquid and gaseous xenon, and vacuum. These charge transport properties and the behavior of photocathodes in a xenon environment are important in designing and calibrating future large scale noble liquid detectors11sci

Characterization of an Ionization Readout Tile for nEXO

A new design for the anode of a time projection chamber, consisting of a charge-detecting "tile, is investigated for use in large scale liquid xenon detectors. The tile is produced by depositing 60 orthogonal metal charge-collecting strips, 3 mm wide, on a 10 cm × 10 cm fused-silica wafer. These charge tiles may be employed by large detectors, such as the proposed tonne-

Imaging individual barium atoms in solid xenon for barium tagging in nEXO

Double-β-decay involves the simultaneous conversion of two neutrons into two protons, and the emission of two electrons and two neutrinos; the neutrinoless process, although not yet observed, is thought to involve the emission of the two electrons but no neutrinos. The search for neutrinoless-double-β-decay probes fundamental properties of neutrinos, including whether or not the neutrino and antineutrino are distinct particles. Double-β-decay detectors are large and expensive, so it is essential to achieve the highest possible sensitivity with each study, and removing spurious contributions (‘background’) from detected signals is crucial. In the nEXO neutrinoless-double-β-decay experiment, the identification, or ‘tagging’, of the 136 Ba daughter atom resulting from the double-β decay of 136 Xe provides a technique for discriminating background. The tagging scheme studied here uses a cryogenic probe to trap the barium atom in a solid xenon matrix, where the barium atom is tagged through fluorescence imaging. Here we demonstrate the imaging and counting of individual barium atoms in solid xenon by scanning a focused laser across a solid xenon matrix deposited on a sapphire window. When the laser irradiates an individual atom, the fluorescence persists for about 30 seconds before dropping abruptly to the background level—a clear confirmation of one-atom imaging. Following evaporation of a barium deposit, the residual barium fluorescence is 0.16 per cent or less. Our technique achieves the imaging of single atoms in a solid noble element, establishing the basic principle of barium tagging for nEXO

Study of silicon photomultiplier performance in external electric fields

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance i

Characterization of the Hamamatsu VUV4 MPPCs for nEXO

In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Multi-Pixel Photon Counters (MPPC)s as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various MPPC features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. MPPCs were characterized in the range 163K≤T≤233K. At an over voltage of 3.1±0.2 V and at T=163K we report a number of Correlated Avalanches (CAs) per pulse in the 1μs interval following the trigger pulse of 0.161±0.005. At the same settings the Dark-Noise (DN) rate is 0.137±0.002Hz/mm2. Both the number of CAs and the DN rate ar

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μm micro-cells conducted with xenon scintillation light (∼175 nm) in liquid xenon. The specular reflectivity at 15ˆ incidence of three samples of VUV4 SiPMs is found to be 30.4±1.4%, 28.6±1.3%, and 28.0±1.3%, respectively. The PDE at normal incidence differs by ±8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon