Influence of Si concentration on electrical and optical properties of room temperature ZnO:Si thin films

Si-doped Zinc Oxide (SxZO, x from 0 to 4.5 at.%) thin films are grown at room temperature under an oxygen pressure of 1.0 Pa, using Pulsed Laser Deposition. Hall effect measurements report a decrease in resistivity as Si concentration increases from x = 0 to x ~ 1.5% (ρS1.5ZO = 9 × 10− 4 Ω cm) followed by an increase in resistivity as the Si content further increases. The enhancement in resistivity as x increases above ~ 1.5% is associated with a decrease in carrier mobility with no further increase in carrier concentration; it suggests that the additional Si atoms are not only electrically inactive but also act as electron trapping centers suggesting that they are not well incorporated in the ZnO structure. Such observation well agrees with the decrease in crystallinity observed with Si content leading to amorphous films for x as low as 1%, when deposited on glass substrate. Finally, a resistivity as low as 3.3 × 10− 4 Ω cm is reported for S1.5ZO thin films deposited at 100 °C

Effects of the anisotropy of pulsed energy beam deposition on ZnO thin film properties

Poste

Epitaxial Nd:ZnO thin films with inclined c-axis grown on c-cut sapphire substrates

posterInternational audienc

Tailoring of c-axis orientation of Nd:ZnO thin films by oblique angle deposition

posterInternational audienc

Epitaxial Nd:ZnO thin films with inclined c-axis grown on c-cut sapphire substrates

posterInternational audienc

From ZnF2 to ZnO thin films using pulsed laser deposition : Optical and electrical properties

The growth of Zn-based thin films, from pure ZnF2 to pure ZnO, has been investigated as a function of the oxygen partial pressure and substrate temperature using pulsed laser deposition. Starting from (1−x) ZnO−x*ZnF2 target compositions, ZOF films containing a low fluorine content (x<0.10) have been successfully deposited. These films exhibit typical ZnO wurtzite structure while maintaining the (002) preferred orientation. The fluorine doping does not modify the film transparency (T≈90%), whereas for a high fluorine content, a large haze effect is observed. Such effects are associated with increased surface roughness. The Hall effect measurements show a beneficial effect with the addition of F corresponding to a decrease in resistivity for ZOF thin films accounting for oxygen to fluorine substitution in the ZnO structure. In contrast, attempts at annealing in air of successfully deposited pure ZnF2 thin films does not lead to increased conductivity in the films; this is associated with a progressive transformation from ZnF2 to ZnO. Finally, improvements in the electrical properties are proposed for F and Si co-doping, and resistivities as low as 7.2×10−4 Ω cm for SZOF thin films deposited at RT from a ZnO (87 at%)-ZnF2 (10 at%)-SiO2 (3 at%) target are achieved

Uniform oxide films by PLD on large dimensions : reality or utopia ?

posterInternational audienc

Tailoring of c-axis orientation of Nd:ZnO thin films by oblique angle deposition

posterInternational audienc

Uniform oxide films by PLD on large dimensions : reality or utopia ?

posterInternational audienc

Magnetic and magnetotransport properties of ZnxFe3−xO4−y thin films

International audienc