5 Watt GaN HEMT Power Amplifier for LTE

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz)

Rectifier Design Challenges for RF Wireless Power Transfer and Energy Harvesting Systems

The design of wireless power transfer (WPT) and energy harvesting (EH) solutions poses different challenges towards achieving maximum RF-DC conversion efficiency in these systems. This paper covers several selected challenges when developing WPT and electromagnetic EH solutions, such as the design of multiband and broadband rectifiers, the minimization of the effect that load and input power variations may have on the system performance and finally the most optimum power combining mechanisms that can be used when dealing with multi-element rectifiers

Diseño y simulación de una rectenna para cosechar energía electromagnética a 2.4 GHz

Trabajo de InvestigaciónSe realizó el diseño y la simulación de una antena rectificadora con tecnología microcinta a 2.4 GHz junto con un filtro pasa-banda chebyshev de octavo orden y un rectificador de onda completa tipo puente de diodos con el fin de obtener la conversión de ondas electromagneticas a una señal DC.INTRODUCCIÓN 1. GENERALIDADES 2. RECTENNAS Y HERRMANIENTAS DE SIMULACIÓN 3. DISEÑO DE UNA ANTENA RECTIFICADORA A 2.4 GHz 4. DISEÑO Y SIMULACIÓN DE LA ANTENA RECTIFICADORA 5. CONCLUSIONES 6. RECOMENDACIONES Y TRABAJOS FUTUROS 7. ESTRATEGIAS DE COMUNICACIÓNPregradoIngeniero Electrónic

5 Watt GaN HEMT Power Amplifier for LTE

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz)