Resistive relaxation in field-induced insulator-metal transition of a (La0.4_{0.4}Pr0.6_{0.6})1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7} bilayer manganite single crystal

We have investigated the resistive relaxation of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of the field-induced insulator to metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponential function accompanied by a slow relaxation similar to that obtained in magnetization and magnetostriction data. We demonstrate that the remanent relaxation in magnetotransport has a close relationship with magnetic relaxation that can be understood in the framework of an effective medium approximation by assuming that the first order parameter is proportional to the second order one.Comment: 6 pages,5 figure

Stretched exponential behavior in remanent lattice striction of a (La,Pr)1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7} bilayer manganite single crystal

We have investigated the time dependence of remanent magnetostriction in a (La,Pr)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of lattice distortion in bilayered manganites. A competition between double exchange and Jahn-Teller type orbital-lattice interactions results in the observed lattice profile following a stretched exponential function. This finding suggests that spatial growth of the local lattice distortions coupled with e$_{g}$-electron orbital strongly correlates with the appearance of the field-induced CMR effect.Comment: 3 figure

Steplike Lattice Deformation of Single Crystalline (La0.4_{0.4}Pr0.6_{0.6})1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7} Bilayered Manganite

We report a steplike lattice transformation of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$bilayered manganite accompanied by both magnetization and magnetoresistive jumps, and examine the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase accompanied by a huge decrease in resistance. Our findings support that the abrupt magnetostriction is closely related to an orbital frustration existing in the inhomogeneous paramagnetic insulating phase rather than a martensitic scenario between competing two phases.Comment: 5 pages,4figures, v4: figures are changed, in press in Phys.Rev.Let

Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La0.4_{0.4}Pr0.6_{0.6})1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7}

We report a significant decrease in the low-temperature resistance induced by the application of an electric current on the $ab$-plane in the paramagnetic insulating (PMI) state of (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$. A colossal electroresistance effect attaining -95% is observed at lower temperatures. A colossal magnetoresistive step appears near 5T at low temperatures below 10K, accompanied by an ultrasharp width of the insulator-metal transition. Injection of higher currents to the crystal causes a disappearance of the steplike transition. These findings have a close relationship with the presence of the short-range charge-ordered clusters pinned within the PMI matrix of the crystal studied.Comment: 4 pages 3 figure

Anomalous pressure effect on the remanent lattice striction of a (La,Pr)1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7} bilayered manganite single crystal

We have studied the pressure effect on magnetostriction, both in the $ab$-plane and along the c-axis, of a (La,Pr)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite single crystal over the temperature region where the field-induced ferromagnetic metal (FMM) transition takes place. For comparison, we have also examined the pressure dependence of magnetization curves at the corresponding temperatures. The applied pressure reduces the critical field of the FMM transition and it enhances the remanent magnetostriction. An anomalous pressure effect on the remanent lattice relaxation is observed and is similar to the pressure effect on the remanent magnetization along the c-axis. These findings are understood from the view point that the double-exchange interaction driven FMM state is strengthened by application of pressure.Comment: 7 pages,7 figure

In-plane thermal conductivity of large single crystals of Sm-substituted (Y1−x_{1-x}Smx_{x})Ba2_{2}Cu3_{3}O7−δ_{7-\delta}

We have investigated the in-plane thermal conductivity $\kappa_{ab}(T,H)$ of large single crystals of optimally oxygen-doped (Y$_{1-x}$,Sm$_{x}$)Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ ($x$=0, 0.1, 0.2 and 1.0) and YBa$_{2}$(Cu$_{1-y}$Zn$_{y}$)$_{3}$O$_{7-\delta}$($y$=0.0071) as functions of temperature and magnetic field (along the c axis). For comparison, the temperature dependence of $\kappa_{ab}$ for as-grown crystals with the corresponding compositions are presented. The nonlinear field dependence of $\kappa_{ab}$ for all crystals was observed at relatively low fields near a half of $T_{c}$. We make fits of the $\kappa(H)$ data to an electron contribution model, providing both the mean free path of quasiparticles $\ell_{0}$ and the electronic thermal conductivity $\kappa_{e}$, in the absence of field. The local lattice distortion due to the Sm substitution for Y suppresses both the phonon and electron contributions. On the other hand, the light Zn doping into the CuO $_{2}$ planes affects solely the electron component below $T_{c}$, resulting in a substantial decrease in $\ell_{0}$ .Comment: 7 pages,4 figures,1 tabl

4f-hybridization effect on the magnetism of Nd2PdSi3, an anomalous magnetic compound

Among the members of the series R2PdSi3 (R= Rare-earths), the magnetic behavior of the Nd compound is interesting in some respects. This compound is considered to order ferromagnetically (below 16 K), unlike other members of this series which order antiferromagnetically. In addition, magnetic ordering temperature (To) is significantly enhanced with respect to de Gennes scaled value. In order to understand the magnetism of this compound better, we have investigated the magnetic behavior in detail (under external pressure as well) and also of its solid solutions based on substitutions at Nd and at Si sites, viz., on the series, Nd(2-x)(Y,La)(x)PdSi(3-y)Ge(y) (x, y= 0.2, 0.4, 0.8, and 1.2) by bulk measurements. The results overall establish that Nd2PdSi3 orders ferromagnetically below 16 K, but antiferromagnetic component seems to set in at very low temperatures. Notably, there is a significant suppression of To for Y and Ge substitutions, compared to La substitution, for a given magnitude of unit-cell volume change, however qualitatively correlating with the separation between the layers of Nd and Pd-Si(Ge). On the basis of this observation, we conclude that 4f(Nd) hybridization plays a major role on the magnetism of the former solid solutions. To our knowledge, this work serves as a rare demonstration of 4f-hybridization effects on the magnetism of a Nd-based intermetallic compound.Comment: PRB November 2011 (accepted

Effect of pressure on steplike magnetostriction of single crystalline (La0.4_{0.4}Pr0.6_{0.6})1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7} bilayered manganite

e report the effect of pressure on the steplike magnetostriction of single crystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings of the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase. The application of pressure suppresses a steplike transformation and causes a broad change in the magnetostriction. The injection of an electric current to the crystal also weakens the steplike variation in both the magnetostriction and magnetoresistance. The stabilization of ferromagnetic interaction or the delocalization of charge carriers is promoted with the applied pressure or applied current, resulting in the suppressed steplike behavior. Our findings suggest that the step phenomenon is closely related to the existence of localized carriers such as the short-range charge-orbital ordered clusters.Comment: 5 pages,4 figure

Effect of suppression of local distortion on magnetic, electrical and thermal transport properties of Cr substituted bi-layer manganite LaSr2_{2}Mn2_{2}O7_{7}

We have investigated magnetic, electrical and thermal transport properties (Seebeck effect and thermal conductivity) of LaSr$_{2}$Mn$_{2-y}$Cr$_{y}$O$_{7}$ polycrystalline samples ($y$=0.1, 0.2, 0.4 and 0.6). The Cr$^{3+}$ substitution for Mn$^{3+}$ sites causes a removal of $d_{x^2-y^2}$ orbital of $e_g$-electron resulting in a volume shrinkage of lattice. Magnetic measurements reveal the appearance of a glassy behavior for Cr-doped samples, accompanied by both a collapse of the A-type antiferromagnetic structure and the growth of ferromagnetic clusters. Cr-doping effect on electrical transport strongly enhances an insulating behavior over a wide range of temperature, while it suppresses a local minimum of thermoelectric power at lower temperatures. The phonon thermal conduction gradually rises with increasing Cr content, which is contradictory to a typical impurity effect on thermal conductivity. We attribute this to a suppression of local lattice distortion through the introduction of Jahn-Teller inactive ions of Cr$^{3+}$.Comment: 8 pages, 9figure

Properties of Nb3Al Wires Processed by Double Rapid Heating and Quenching

AbstractWe have been developing Nb3Al wires processed by rapid heating and quenching for a number of years as promising candidates for use in future high-field accelerator magnets. These wires have better strain and stress tolerances than Nb3Sn wires do, but to meet the demands of future accelerator magnet designs, it is necessary to further improve their performance. In particular,it is necessary to increase their non-copper critical current density in 12-20T fields. To pursue this goal, we introduced double rapid heating and quenching (DRHQ) treatment into the fabrication process for Nb3Al wires, and studied the mechanical and superconducting properties of the resulting DRHQ-processed wires