Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbons

In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi2Se3 nanoribbons with thicknesses of 8–15 nm. Physical and electrical characterization of the synthesized Bi2Se3 nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons

Current-phase relation of a short multi-mode Bi2Se3 topological insulator nanoribbon Josephson junction with ballistic transport modes

We used the asymmetric superconducting quantum interference device (SQUID) technique to extract the current phase relation (CPR) of a Josephson junction with a 3D-topological insulator (3D-TI) Bi2Se3 nanobelt as the barrier. The obtained CPR shows deviations from the standard sinusoidal CPR with a pronounced forward skewness. At temperatures below 200 mK, the junction skewness values are above the zero temperature limit for short diffusive junctions. Fitting of the extracted CPR shows that most of the supercurrent is carried by ballistic topological surface states (TSSs), with a small contribution of diffusive channels primarily due to the bulk. These findings are instrumental in engineering devices that can fully exploit the properties of the topologically protected surface states of 3D TIs

Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect

In this work, we present a method to enhance the longitudinal spin Seebeck effect at platinum/yttrium iron garnet (Pt/YIG) interfaces. The introduction of a partial interlayer of bismuth selenide (Bi2Se3, 2.5% surface coverage) interfaces significantly increases (by ∼380%–690%) the spin Seebeck coefficient over equivalent Pt/YIG control devices. Optimal devices are prepared by transferring Bi2Se3 nanoribbons, prepared under anaerobic conditions, onto the YIG (111) chips followed by rapid over-coating with Pt. The deposited Pt/Bi2Se3 nanoribbon/YIG assembly is characterized by scanning electron microscope. The expected elemental compositions of Bi2Se3 and YIG are confirmed by energy dispersive x-ray analysis. A spin Seebeck coefficient of 0.34–0.62 μV/K for Pt/Bi2Se3/YIG is attained for our devices, compared to just 0.09 μV/K for Pt/YIG controls at a 12 K thermal gradient and a magnetic field swept from −50 to +50 mT. Superconducting quantum interference device magnetometer studies indicate that the magnetic moment of Pt/Bi2Se3/YIG treated chips is increased by ∼4% vs control Pt/YIG chips (i.e., a significant increase vs the ±0.06% chip mass reproducibility). Increased surface magnetization is also detected in magnetic force microscope studies of Pt/Bi2Se3/YIG, suggesting that the enhancement of spin injection is associated with the presence of Bi2Se3 nanoribbons

Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons

This research was funded by the Latvian Council of Science, project “Highly tunable surface state transport in topological insulator nanoribbons”, No. lzp-2020/2-0343, and by the European Union’s Horizon 2020 research and innovation program, Grant Agreement No. 766714/ HiTIMe. Institute of Solid-State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important. In this work, all-around ZnO-encapsulated nanoribbons are investigated. Gate-dependent magnetotransport measurements show improved charge transport characteristics as reduced nanoribbon/substrate interface carrier densities compared to the values obtained for the as-grown nanoribbons on SiO2 substrates. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.Latvian Council of Science lzp-2020/2-0343; H2020 Grant Agreement No. 766714; Institute of Solid-State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2