A Flexible Simple Thermostat for Small Objects and the Range of 100 to 400 K

A flexible, inexpensive thermostat for the temperature range 100 to 400 K is described. Liquid nitrogen is the coolant and a gas serves as transfer medium. The temperature can be set to better than 1 K and is held there within (1/2) K by an electronic control system. The relatively small working volume of the order of 10 cm^3 allows quick changes of temperature, a desirable feature in typical semiconductor experiments

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W

A flexible, simple thermostat for small objects and the temperature range of 100 deg K to 400 deg K

Thermostat for small objects with temperature range of 100 to 400

Spectral absorption coefficients of carbon, nitrogen, and oxygen atoms

Spectral absorption coefficients of carbon, nitrogen, and oxygen atoms tabulated for use in radiant energy transfer calculation

Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates

The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV

Silicon implantation in GaAs

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range

Magnetic properties of amorphous thin films produced by ion mixing

We have produced several magnetic amorphous alloys by ion mixing of thin multilayer films. Our results show that the ion mixing technique is able to produce amorphous films of the various categories (transition metal-metalloid, transition metal pairs) at the composition appropriate for the appearance of magnetic ordering. A comparison of their saturation magnetization with that of related vapor quenched films suggests similar nearest-neighbor coordination in both kinds of samples

Noise and Equivalent Circuit of Double Injection

Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise