Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.Comment: 3 pages, 3 figure

Identifying suitable substrates for high-quality graphene-based heterostructures

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.Comment: 6 pages, 5 figure

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500 cm$^{2}$/Vs. Improved output conductance is observed in direct current (DC) measurements under ambient conditions, indicating potential for radio-frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low frequency signal amplifier circuit. RF characterization of the GFETs yields an f$_{T}$ x L$_{g}$ product of 2.64 GHz$\mu$m and an f$_{Max}$ x L$_{g}$ product of 5.88 GHz$\mu$m. This study presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step towards scalable, all CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit architectures.Comment: 6 page

Graphene Field-Effect Transistors for Millimeter Wave Amplifiers

In this work, we analyze high frequency performance of graphene field-effect transistors (GFETs), applying models of drain resistance, carrier velocity andsaturation velocity. This allows us to identify main limitations and propose an approach most promising for further development of the GFETs suitable for advanced mm-wave amplifiers. Analysis indicates, that the saturation velocity of charge carriers in the GFETs can be increased up to 5e7 cm/s via encapsulating graphene by hexagonal boron nitride layers, with corresponding increase of extrinsic maximum frequency of oscillation up to 180 GHz at 200 nm gate length