8 research outputs found

    Potential barrier lowering and electrical transport at the LaAlO3_{3}/SrTiO3_{3} heterointerface

    Full text link
    Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO3_{3}/SrTiO3_{3} heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO3_{3} as well as SrTiO3_{3}. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO3_{3} film on a SrTiO3_{3} substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.Comment: 10 pages, 3 figures, and 1 tabl

    Enhanced magnetization of CuCr2O4 thin films by substrate-induced strain

    Get PDF
    We report the synthesis of epitaxial spinel CuCr{sub 2}O{sub 4} thin films that display enhanced magnetization in excess of 200% of the bulk values when grown on single-crystal (110) MgAl{sub 2}O{sub 4} substrates. Bulk CuCr{sub 2}O{sub 4} is a ferrimagnetic insulator with a net magnetic moment of 0.5 {micro}{sub B} due to its distorted tetragonal unit cell (c/a= 1.29) and frustrated triangular moment configuration. We show that through epitaxial growth and substrate-induced strain, it is possible to tune the magnetic functionality of our films by reducing the tetragonal distortion of the unit cell which effectively decreases the frustration of the magnetic moments allowing for an overall greater net moment

    Enhanced Magnetization of CuCr 2 O 4 Thin Films by Substrate-Induced Strain

    No full text
    Abstract We report the synthesis of epitaxial spinel CuCr 2 O 4 thin films that display enhanced magnetization in excess of 200% of the bulk values when grown on single-crysta
    corecore