Decontamination experimentale de bivalves toxiques : application aux phycotoxines paralysantes

Available from INIST (FR), Document Supply Service, under shelf-number : RP 185 (4018) / INIST-CNRS - Institut de l'Information Scientifique et TechniqueSIGLEMinistere de l'Environnement, 75 - Paris (France). Service de la Recherche et des Affaires Economiques (SRAE)FRFranc

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator