Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms

Superconducting and normal state properties of sputtered Niobium nanofilms have been systematically investigated, as a function of film thickness in a d=9-90 nm range, on different substrates. The width of the superconducting-to-normal transition for all films remained in few tens of mK, thus remarkably narrow, confirming their high quality. We found that the superconducting critical current density exhibits a pronounced maximum, three times larger than its bulk value, for film thickness around 25 nm, marking the 3D-to-2D crossover. The extracted magnetic penetration depth shows a sizeable enhancement for the thinnest films, aside the usual demagnetization effects. Additional amplification effects of the superconducting properties have been obtained in the case of sapphire substrates or squeezing the lateral size of the nanofilms. For thickness close to 20 nm we also measured a doubled perpendicular critical magnetic field compared to its saturation value for d>33 nm, indicating shortening of the correlation length and the formation of small Cooper pairs in the condensate. Our data analysis evidences an exciting interplay between quantum-size and proximity effects together with strong-coupling effects and importance of disorder in the thinnest films, locating the ones with optimally enhanced critical properties close to the BCS-BEC crossover regime

Recommended implementation of electrical resistance tomography for conductivity mapping of metallic nanowire networks using voltage excitation

open6noThe knowledge of the spatial distribution of the electrical conductivity of metallic nanowire networks (NWN) is important for tailoring the performance in applications. This work focuses on Electrical Resistance Tomography (ERT), a technique that maps the electrical conductivity of a sample from several resistance measurements performed on its border. We show that ERT can be successfully employed for NWN characterisation if a dedicated measurement protocol is employed. When applied to other materials, ERT measurements are typically performed with a constant current excitation; we show that, because of the peculiar microscopic structure and behaviour of metallic NWN, a constant voltage excitation protocols is preferable. This protocol maximises the signal to noise ratio in the resistance measurements-and thus the accuracy of ERT maps-while preventing the onset of sample alterations.openCultrera, Alessandro; Milano, Gianluca; De Leo, Natascia; Ricciardi, Carlo; Boarino, Luca; Callegaro, LucaCultrera, Alessandro; Milano, Gianluca; De Leo, Natascia; Ricciardi, Carlo; Boarino, Luca; Callegaro, Luc

Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices

Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbOx-based memristive cells. For this purpose, the effect of Au, Pt, Ir, TiN, and Nb top electrodes was investigated in devices based on amorphous NbOx grown by anodic oxidation on a Nb substrate exploited also as counter electrode. It is shown that the choice of the metal electrode regulates electronic transport properties of metal–insulator interfaces, strongly influences the electroforming process, and the following resistive switching characteristics. Results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. It is shown that Pt represents the best choice for the realization of memristive cells when the NbOx thickness is reduced, making possible the realization of memristive cells characterised by low variability in operating voltages, resistance states and with low device-to-device variability. These results can provide new insights towards a rational design of redox-based memristive cells

Memristive Devices for Quantum Metrology

As a consequence of the redefinition of the International System of Units (SI), where units are defined in terms of fundamental physical constants, memristive devices represent a promising platform for quantum metrology. Coupling ionics with electronics, memristive devices can exhibit conductance levels quantized in multiples of the fundamental quantum of conductance G(0) = 2e(2)/h. Since the fundamental quantum of conductance G(0) is related only to physical constants that assume fixed value in the revised SI, memristive devices can be exploited for the practical realization of a quantum-based resistance standard that, differently from quantum-Hall based devices conventionally adopted as resistance standards, can operate in different ambient conditions (air, vacuum, harsh environment), in a wide range of temperatures and without the need of an applied magnetic field In this work, the possibility of using memristive devices for quantum metrology is critically discussed, based on recent experimental and theoretical advances on quantum conductance phenomena reported in literature. Thanks to the high operational speed, high scalability down to the nanometer scale, and CMOS compatibility, memristive devices allow on-chip implementation of a resistance standard required for the realization of self-calibrating electrical systems and equipment with zero-chain traceability in accordance with the revised SI

Liquid Phase Infiltration of Block Copolymers

Novel materials with defined composition and structures at the nanoscale are increasingly desired in several research fields spanning a wide range of applications. The development of new approaches of synthesis that provide such control is therefore required in order to relate the material properties to its functionalities. Self-assembling materials such as block copolymers (BCPs), in combination with liquid phase infiltration (LPI) processes, represent an ideal strategy for the synthesis of inorganic materials into even more complex and functional features. This review provides an overview of the mechanism involved in the LPI, outlining the role of the different polymer infiltration parameters on the resulting material properties. We report newly developed methodologies that extend the LPI to the realisation of multicomponent and 3D inorganic nanostructures. Finally, the recently reported implementation of LPI into different applications such as photonics, plasmonics and electronics are highlighted

Mapping Time-Dependent Conductivity of Metallic Nanowire Networks by Electrical Resistance Tomography toward Transparent Conductive Materials

partially_open7Metallic nanowire (NW) networks have attracted great attention as promising transparent conductive materials thanks to the low sheet resistance, high transparency, low cost production, and compatibility with flexible substrates. Despite many efforts having been devoted to investigating the conduction mechanism, a quantitative characterization of local electrical properties of nanowire networks at the macroscale still represents a challenge. In this work, we report on the investigation of local electrical properties and their evolution over time of Ag NW networks by means of electrical resistance tomography (ERT). Spatial correlation of local conductivity properties and optical transparency revealed that the nonscanning and rapid ERT technique allows to probe local electrical inhomogeneities in the NW network, differently from conventional measurement techniques such as van der Pauw and the four-point probe. In addition, ERT mapping over time was employed for in situ monitoring the evolution of Ag NW networks conductivity, elucidating the dependence of the degradation of local electrical properties under ambient exposure on the initial conductivity. Our results shed light on the importance of the characterization of local electrical properties of NW networks where uniformity and stability represent the main challenges to overcome for their use as transparent conductive materials.openGianluca Milano; Alessandro Cultrera; Katarzyna Bejtka; Natascia De Leo; Luca Callegaro; Carlo Ricciardi; Luca BoarinoMilano, Gianluca; Cultrera, Alessandro; Bejtka, Katarzyna; DE LEO, Maria; Callegaro, Luca; Ricciardi, Carlo; Boarino, Luc

Bloch surface waves-controlled fluorescence emission: coupling into nanometer-sized polymeric waveguides

The lateral confinement of Bloch surface waves on a patterned multilayer is investigated by means of leakage radiation microscopy (LRM). Arrays of nanometric polymeric waveguides are fabricated on a proper silicon-nitride/silicon-oxide multilayer grown on a standard glass coverslip. By exploiting the functional properties of the polymer, fluorescent proteins are grafted onto the waveguides. A fluorescence LRM analysis of both the direct and the Fourier image plane reveals that a substantial amount of emitted radiation couples into a guided mode and then propagates into the nanometric waveguide. The observations of the mode are supported by numerical simulations

Vortex-induced nonlinearity and the effects of ion irradiation on the high-frequency response of NbTi films

The microwave response of superconducting devices can be affected by nonlinearity effects of both intrinsic and extrinsic origin. In this study, we report on the nonlinear behavior of NbTi microwave resonators, in the presence of dc magnetic fields up to 4 T. The aim of this work is to characterize the vortex-induced nonlinearity, which in these conditions of frequency (11 GHz) and fields is expected to give the major contribution to dissipation, when the circulating rf current exceeds a given threshold. Nonlinearity is investigated by analyzing -degradation and resonance curve distortion as a function of the input rf power, while the emergence of sharp discontinuities is associated to the existence of an rf limiting current density. The current densities corresponding to the onset of these features are compared to the critical current density from dc measurements, helping us to outline a comprehensive picture. Moreover, the pinning constant was extracted as a function of temperature by means of a Gittleman–Rosenblum analysis, revealing the prominent role of type pinning. We also analyzed the effects of introducing controlled artificial disorder and pinning sites through 1.5-MeV proton irradiation. After irradiation, we observed an increase of both the pinning constant and the in-field nonlinearity threshold and limiting current