35 research outputs found
From Large-Scale Synthesis to Lighting Device Applications of Ternary I–III–VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters
Quantum dots with
fabulous size-dependent and color-tunable emissions
remained as one of the most exciting inventories in nanomaterials
for the last 3 decades. Even though a large number of such dot nanocrystals
were developed, CdSe still remained as unbeatable and highly trusted
lighting nanocrystals. Beyond these, the ternary I–III–VI
family of nanocrystals emerged as the most widely accepted greener
materials with efficient emissions tunable in visible as well as NIR
spectral windows. These bring the high possibility of their implementation
as lighting materials acceptable to the community and also to the
environment. Keeping these in mind, in this Perspective, the latest
developments of ternary I–III–VI nanocrystals from their
large-scale synthesis to device applications are presented. Incorporating
ZnS, tuning the composition, mixing with other nanocrystals, and doping
with Mn ions, light-emitting devices of single color as well as for
generating white light emissions are also discussed. In addition,
the future prospects of these materials in lighting applications are
also proposed
Facet Chemistry and the Impact of Surface Ligands on the Photoluminescence of Different Polyhedral-Shaped CsPbBr<sub>3</sub> Perovskite Nanocrystals
Controlling the surface ligand chemistry of lead halide
perovskite
nanocrystals remains one of the most important parameters for stabilizing
different facets and maintaining high photoluminescence quantum yields
(PLQYs). Successive washings or the use of antisolvents not only quenches
the emission but also changes the crystal phase of these nanocrystals.
However, studies to date have mostly focused on oleylammonium ion
capped six-faceted hexahedron-shaped halide perovskite nanocrystals.
In contrast, herein the impact of other ligands stabilizing other
than facets of cube shaped nanocrystals is studied, and the physical
insights of interface binding for stabilizing new facets and retaining
near-unity PLQYs even with successive washings are discussed. Apart
from nanocubes, 12-faceted dodecahedrons and 26-faceted rhombicuboctahedrons
of CsPbBr3 having tertiary ammonium ion ligands are explored
for successive dilution, precipitation, and redispersion studies with
further bromide additions to investigate the change in the PLQY, crystal
phase, and optical stability. After comparison, it is established
that dodecahedron nanocrystals even in a larger size regime showed
robust stability and retained near-unity PLQYs with four successive
stages of dilutions and precipitations and hardly showed any differences
in low-temperature brightness or any enhancement with extra bromide
addition. These results suggest that ligands and facets remain the
key features in bringing optical stability to lead halide perovskite
nanocrystals
Surface Doping for Hindrance of Crystal Growth and Structural Transformation in Semiconductor Nanocrystals
Doping can strongly influence the
crystal growth of semiconductor
nanocrystals. It can change the surface energy and therefore the growth
directions and shape of the host nanocrystals. While doping of transition
metal ions in various semiconductor host nanocrystals is widely studied
for obtaining new material properties, the effect of doping on crystal
growth has been less explored. Herein, we study the change in the
crystal growth pattern and growth rate with doping of one of the most
common dopants Mn in a ZnSe host. With the help of selective surface
binding ligands, hemisphere-shaped zinc blende nanostructures are
designed from ZnSe seeds and dopant Mn precursors in different amounts
are introduced at different stages of the synthetic process. Monitoring
the sequential product and analyzing the surface or internal locations
of the dopants, the possibility of shape change has been discussed.
Moreover, the mutual effects of crystal growth and doping on one another
are also determined considering the progress of the reactions under
different conditions. We believe that the results presented here are
important for understanding the doping mechanism and its effects during
crystal growth in semiconductor nanocrystals, which are not clear
to date
Material Diffusion and Doping of Mn in Wurtzite ZnSe Nanorods
Light-emitting
transition metal ion doped 1D nanorods can be a
suitable candidate for fabrication of the advanced opto-electronic-based
nanodevices. Among various doped nanocrystals, Mn doped ZnSe nanocrystals
are widely studied for their intense Mn d–d emission. However,
this is mostly performed in the zinc blende phase of spherical ZnSe
quantum dots. But, herein we study the strategy to dope Mn ions in
wurtzite phase of 1D ZnSe nanorods. To achieve this, it is essential
to control the 1D crystal growth of ZnSe to facilitate the adsorption
of dopants. The anisotropic 1D nanostructures are designed following
thermally controlled material diffusion process rather than the most
widely expected kinetically driven crystal growth protocol, and the
dopants are introduced at the appropriate stage of the growth for
their adsorption. Using preformed magic size wurtzite ZnSe nanowires
as the source material and fragmenting them at higher reaction temperature,
ZnSe nanorods with variable aspect ratios are designed. These rods
follow both inter- and intrarods material diffusion and retain the
wurtzite phase throughout their transformation. This helps in understanding
the insertion, adsorption, and retention of dopant Mn in the wurtzite
phase of the 1D nanostructure
Anisotropic Zinc Blende ZnSe Nanostructures: The Interface Chemistry and the Retention of Zinc Blende Phase during Growth
Anisotropic growth in the zinc blende
phase of nanomaterials in
solution is normally less favorable in comparison to the wurtzite
phase. Considering the case of ZnSe and using appropriate surface
ligands for selective facet binding, herein we report the anisotropic
growth leading to 1D rods, bullet-shaped and finally hemisphere-shaped
nanostructures. A detailed study from the nucleation with magic-sized
dots to all these structures has been performed, and their formation
mechanism has been discussed. Interestingly, while such structures
have existed to date mostly in wurtzite-type crystal phase with cell
parameters <i>a</i> = <i>b</i> ≠<i>c</i>, here for ZnSe they are formed uniquely in zinc blende
phase with <i>a</i> = <i>b</i> = <i>c</i>
A Controlled Growth Process To Design Relatively Larger Size Semiconductor Nanocrystals
The growth of semiconductor nanocrystals in solution
is mostly
governed by the kinetic and thermal modes of control of the reaction
process. In most of the cases, the size of the particles is limited
within 5–6 nm, and further annealing mostly defocuses the particles
size distribution. But, herein, we report a self-driven growth protocol
which supplies the monomer continuously to significant extent and
delays the thermal diffusion-controlled ripening process. This has
been achieved by choosing appropriate sulfur precursor in the synthesis
of metal sulfide nanocrystals which controls the sulfide ion concentration
in the reaction medium via establishing an appropriate chemical equilibrium.
As a consequence, the monomer concentration retains above their critical
limit and it delays the ripening process. Finally, the nanocrystals
can grow even larger than 10 nm, which are difficult to obtain from
different established
synthetic approaches. This has been observed for several semiconductor
nanocrystals such as ZnS, CdS, CdZnS, and also in ZnSe nanocrystals.
Further, this growth process has been adopted to dope Mn in larger
sized ZnS and CdZnS nanocrystals, and efficient dopant emission has
been obtained
Correlation of Dopant States and Host Bandgap in Dual-Doped Semiconductor Nanocrystals
Excitation of a semiconductor nanocrystal generates an electron–hole pair, which on recombination results in band edge excitonic emission. Insertion of impurity or dopant state capable of donating and/or accepting electrons can change the recombination process and leads to new emission called dopant emission. However, the presence of more than one impurity state generates multiple recombination possibilities, and the allowed transition might follow selective, additive, or a new path to get a new emission. To understand this, herein we report the correlation of host bandgap with dopant states in different dual-doped semiconductor nanocrystals. This has been achieved by doping two optically active (Mn and Cu) dopants in one semiconducting nanocrystal and observing the dopant emission changes with continuous variation of host bandgap. It has been observed that Mn d-state emission is predominated in dual-doped ZnS and Cu impurity state emission for ZnSe in spite of presence of both Mn and Cu in each semiconductor nanocrystal. However, further tuning their bandgap by appropriate alloying again reversed the recombination process where Cu became predominant for alloyed ZnS and Mn for alloyed ZnSe. From these emission changes the dopants states are correlated with the host bandgap and allowed recombination processes have been established
Hybrid Dot–Disk Au-CuInS<sub>2</sub> Nanostructures as Active Photocathode for Efficient Evolution of Hydrogen from Water
The
synthesis of hybrid 0D-2D dot–disk Au-CIS heterostructures
is enabled through nucleating wurtzite ternary I–III–VI
CuInS<sub>2</sub> (CIS) semiconductor nanostructures on cubic Au particles
via thiol-activated interface reactions. Chemistry of formation of
these unique hybrid metal–semiconductor nanostructures is established
by correlating successive X-ray diffraction patterns and microscopic
images. Furthermore, these nanostructures are explored as an efficient
photocathode material for photoelectrochemical (PEC) production of
hydrogen from water. Although CIS nanostructures are extensively used
as PEC active materials for solar-to-hydrogen conversion, the coupled
structures with Au for their exciton–plasmon coupling is observed
in producing a higher photocurrent with efficient evolution of hydrogen.
In the comparison of materials properties, it is observed that the
cathodic photocurrent, onset potential, and the half-cell solar-to-hydrogen
efficiency (HC-STH) are recorded to be superior to all CIS-based photocathodes
reported up to the current time. These results suggest that designing
proper heterostructured functional materials can enhance the hydrogen
production in the PEC cell and would be helpful for the ongoing technological
needs for a greener way of generating and storing hydrogen energy
Mn-Doped Multinary CIZS and AIZS Nanocrystals
Multinary nanocrystals (CuInS<sub>2</sub>, CIS, and AgInS<sub>2</sub>, AIS) are widely known for their strong defect state emission.
On
alloying with Zn (CIZS and AIZS), stable and intense emission tunable
in visible and NIR windows has already been achieved. In these nanocrystals,
the photogenerated hole efficiently moves to the defect-induced state
and recombines with the electron in the conduction band. As a result,
the defect state emission is predominantly observed without any band
edge excitonic emission. Herein, we report the doping of the transition-metal
ion Mn in these nanocrystals, which in certain compositions of the
host nanocrystals quenches this strong defect state emission and predominantly
shows the spin–flip Mn emission. Though several Mn-doped semiconductor
nanocrystals are reported in the literature, these nanocrystals are
of its first kind that can be excited in the visible window, do not
contain the toxic element Cd, and provide efficient emission. Hence,
when Mn emission is required, these multinary nanocrystals can be
the ideal versatile materials for widespread technological applications
Zinc Blende 0D Quantum Dots to Wurtzite 1D Quantum Wires: The Oriented Attachment and Phase Change in ZnSe Nanostructures
Oriented
attachment of nanocrystals has been recently studied as
one of the important tools to organize the nanocrystals in a regular
array to design new nanostructures. This is mostly a thermodynamically
driven process where the nanocrystals align in a certain crystallographic
direction and merge, minimizing the interfacial energy of the system
during the course of reaction. While this has been widely studied
for several group II–VI semiconductor nanocrystals, we explore
herein ZnSe 0D quantum dots which on merging change to 1D quantum
nanowires. Importantly, the phase of the nanocrystals is found to
be transformed from zinc blende to wurtzite after the fusion. To understand
this, we have analyzed the intermediate samples and studied the high-resolution
transmission electron microscopy (HRTEM) of single, twin, and triple
connected dots as well as the final nanowires and address the phase
change during the shape conversion. Additionally, we have provided
density functional theory (DFT) calculation to support our experimental
observations