5,019 research outputs found

    Electronic structure and magnetism in doped semiconducting half-Heusler compounds

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    We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XMx_{x}Y1x_{1-x}Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we have considered the interaction between the dopant transition metal (M) and the valence band X-Z hybrid. We have shown that the strong X-d - M-d interaction places the M-d states close to the Fermi level with the M-t2g_{2g} states lying higher in energy in comparison to the M-eg_{g} states. Depending on the number of available d-electrons, ferromagnetism is realized provided the d-manifold is partially occupied. The tendencies toward ferromagnetic(FM) or antiferromagnetic(AFM) behavior are discussed within Anderson-Hasegawa models of super-exchange and double-exchange. In our calculations for Mn doped NiTiSn, the strong preference for FM over AFM ordering suggests a possible high Curie temperature for these systems.Comment: 14 pages, 6 figure

    Vortex Overlapping in High Temperature Superconductors

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    Determination of the Band Gap of Semiconductors from the Electrical Measurement on Respective Diodes

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    Two Dimensional Spin-Polarized Electron Gas at the Oxide Interfaces

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    The formation of a novel spin-polarized 2D electron gas at the LaMnO3_3 monolayer embedded in SrMnO3_3 is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to the interface in the potential well of the La layer, serving as a positively-charged layer of electron donors. These electrons mediate a ferromagnetic alignment of the Mn t2g_{2g} spins near the interface via the Anderson-Hasegawa double exchange and become, in turn, spin-polarized due to the internal magnetic fields of the Mn moments.Comment: 5 pages, 6 figure
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