グラフェン フクゴウ ブッセイ ノ キノウ デバイスカ ギジュツ ノ ケンキュウ

This study describes formation and evaluation techniques of graphene on SiC for new functional devices using composite properties. A new layer number determination technique for graphene on SiC was established using microscopic Raman spectroscopy. Growth mechanism of graphene was revealed by detailed image analysis of scanning probe microscopy (SPM). Highly uniform single-layer single-crystal graphene was successfully grown on SiC substrate of 10 mm-sq size. New methods for mechanical and electrical properties of graphene were also developed. Friction force of graphene on SiC was evaluated using friction force microscopy. Contact conductance properties were measured using conductive nanoprobes on SPM

Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate

Abstract: This study investigates energy harvesting by a deionized (DI) water droplet flow on an epitaxial graphene film on a SiC substrate. We obtain an epitaxial single-crystal graphene film by annealing a 4H-SiC substrate. Energy harvesting of the solution droplet flow on the graphene surface has been investigated by using NaCl or HCl solutions. This study validates the voltage generated from the DI water flow on the epitaxial graphene film. The maximum generated voltage was as high as 100 mV, which was a quite large value compared with the previous reports. Furthermore, we measure the dependence of flow direction on electrode configuration. The generated voltages are independent of the electrode configuration, indicating that the DI water flow direction is not influenced by the voltage generation for the single-crystal epitaxial graphene film. Based on these results, the origin of the voltage generation on the epitaxial graphene film is not only an outcome of the fluctuation of the electrical-double layer, resulting in the breaking of the uniform balance of the surface charges, but also other factors such as the charges in the DI water or frictional electrification. In addition, the buffer layer has no effect on the epitaxial graphene film on the SiC substrate

Electron transfer characteristics of amino acid adsorption on epitaxial graphene FETs on SiC substrates

Clarifying the adsorption characteristics of biomolecules on graphene surfaces is critical for the development of field-effect transistor (FET)-based biosensors for detecting pH, DNA, proteins, and other biomarkers. Although there are many reports on biomolecule detection using graphene FETs, the detection mechanism has not yet been clarified. In this study, the adsorption behavior and electron transfer characteristics of 20 proteinogenic amino acids on graphene field-effect transistors are investigated. Large single-crystal graphene films were epitaxially grown on SiC substrates by a resist-free metal stencil mask lithography process then patterned by air plasma etching to form FET devices. Amino acids with different charge conditions (positive or negative charge) were introduced onto the epitaxial graphene surface in solution. The charge neutral points of the drain current vs gate voltage curves shifted in the negative gate voltage direction after the introduction of all amino acids, regardless of the type of amino acid and its charge condition. These amino acid adsorption characteristics agree well with previously reported protein adsorption characteristics on epitaxial graphene surfaces, indicating that the adsorption of proteins in the liquid phase occurs by electron doping to the graphene surface. These results indicate that non-specific protein binding always leads to electron doping of epitaxial graphene FETs

Thermal desorption of structured water layer on epitaxial graphene

Thermal desorption of the structured water layer on graphene was observed in this study via electrical conductivity measurements. Specifically, a structured water layer was formed on the graphene surface via deionized water treatment, following which we examined the thermal desorption process of the layer using sheet resistance measurements. The water molecules acting as a p-type dopant were strongly adsorbed on graphene, forming a solid layer. Consequently, the layer was completely removed from the graphene surface at 300⁡°C. The thermal desorption spectrum of the structured water layer on graphene was quantitatively obtained by converting the measured sheet resistance to carrier density change

Vertically stacked graphene tunnel junction with structured water barrier

We report a vertically stacked graphene tunnel junction with an atomically thin insulating layer for novel function devices. The insulating water layer sandwiched between graphene samples as a tunnel barrier which is fabricated through deionized (DI) water treatment of epitaxial graphene. Two graphene samples fabricated by SiC thermal decomposition are directly bonded to each other in a face-to-face manner. Vertically stacked graphene samples without DI water treated formed an ohmic junction. By inserting the structured water layer as tunnel barrier, the stacked junction exhibits Direct tunneling (DT) characteristics in a low-electric-field regime and Fowler-Nordheim tunneling (FNT) characteristics in a high-electric-field regime. The thickness of the structured water layer is estimated to be 0.28 nm by fitting the FNT formula. The very thin structured water layer is stable as tunnel barrier on epitaxial graphene for diode devices, which will have a widely application in electronic devices

Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

Locally defined nanomembrane structures can be produced in graphene films on a SiC substrate with atomic steps. The contact conductance between graphene and a metal-coated nanoprobe in scanning probe microscopy can be drastically reduced by inducing local buckling of the membranes. Repeatable current switching with high reproducibility can be realized. The on/off ratio can be varied from about 105 to below 10 by changing the contact force. At a low contact force, the contact conductance changes from 10μS (‘‘ON’’ state) to 100pS (‘‘OFF’’ state). This novel device structure could represent a new path to electrical switching at the nanoscale