Microstructure and Soft Magnetic Properties of Fe-Zr-(Pt)-Nb-Cu-B Amorphous Alloys

This paper presents the results of investigations into the microstructure and magnetic properties of Fe86Zr7Nb1Cu1B5, Fe82Z-r7Nb2Cu1B8 and Fe81Pt5Zr7Nb1Cu1B5 alloys. The alloys were investigated in their as-quenched state, in the form of thin ribbons with approximate dimensions as follows: width 3 mm and thickness 20 μm.The investigations were performed utilizing Mössbauer spectrometry and X-ray diffractometry. Also, an evaluation of the low-field magnetic susceptibility and measurements of the magnetization versus temperature and magnetizing field were performed

Two and Three Dimensional Incommensurate Modulation in Optimally-Doped Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta}

X-ray scattering measurements on optimally-doped single crystal samples of the high temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ reveal the presence of three distinct incommensurate charge modulations, each involving a roughly fivefold increase in the unit cell dimension along the {\bf b}-direction. The strongest scattering comes from the well known (H, K$\pm$ 0.21, L) modulation and its harmonics. However, we also observe broad diffraction which peak up at the L values complementary to those which characterize the known modulated structure. These diffraction features correspond to correlation lengths of roughly a unit cell dimension, $\xi_c$$\sim$20 $\AA$ in the {\bf c} direction, and of $\xi_b$$\sim$ 185 $\AA$ parallel to the incommensurate wavevector. We interpret these features as arising from three dimensional incommensurate domains and the interfaces between them, respectively. In addition we investigate the recently discovered incommensuate modulations which peak up at (1/2, K$\pm$ 0.21, L) and related wavevectors. Here we explicitly study the L-dependence of this scattering and see that these charge modulations are two dimensional in nature with weak correlations on the scale of a bilayer thickness, and that they correspond to short range, isotropic correlation lengths within the basal plane. We relate these new incommensurate modulations to the electronic nanostructure observed in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ using STM topography.Comment: 8 pages, 8 figure

Analysis of the Thermal and Magnetic Properties of Amorphous Fe 61Co10Zr2.5Hf2.5Me2W2B20 (Where Me = Mo, Nb, Ni Or Y) Ribbons

The paper presents the results of structural and magnetic properties and thermal stability for a group of functional materials based on Fe61Co10Zr2.5Hf2.5Me2W2B20 (where Me = Mo, Nb, Ni or Y). Samples were obtained in the form of ribbons using melt-spinning method. The X-ray diffraction patterns of investigated samples confirmed their amorphous structure. Based on the analysis of DSC curves characteristic temperatures: glass forming temperature (Tg), crystallization temperature (Tx) and temperature range of the supercooled liquid ΔTx were determined. Small addition of transition metals elements has strong influence on magnetic and thermal parameters of studied materials. The comprehensive studies revealed that in terms of magnetic properties the Ni-addition resulted in highest reduction in coercivity and anisotropy field

Magnetostrictive behaviour of thin superconducting disks

Flux-pinning-induced stress and strain distributions in a thin disk superconductor in a perpendicular magnetic field is analyzed. We calculate the body forces, solve the magneto-elastic problem and derive formulas for all stress and strain components, including the magnetostriction $\Delta R/R$. The flux and current density profiles in the disk are assumed to follow the Bean model. During a cycle of the applied field the maximum tensile stress is found to occur approximately midway between the maximum field and the remanent state. An effective relationship between this overall maximum stress and the peak field is found.Comment: 8 pages, 6 figures, submitted to Supercond. Sci. Technol., Proceed. of MEM03 in Kyot

Magnetic flux jumps in textured Bi2Sr2CaCu2O(8+d)

Magnetic flux jumps in textured Bi2Sr2CaCu2O(8+d) have been studied by means of magnetization measurements in the temperature range between 1.95 K and Tc, in an external magnetic field up to 9 T. Flux jumps were found in the temperature range 1.95 K - 6 K, with the external magnetic field parallel to the c axis of the investigated sample. The effect of sample history on magnetic flux jumping was studied and it was found to be well accounted for by the available theoretical models. The magnetic field sweep rate strongly influences the flux jumping and this effect was interpreted in terms of the influence of both flux creep and the thermal environment of the sample. Strong flux creep was found in the temperature and magnetic field range where flux jumps occur suggesting a relationship between the two. The heat exchange conditions between the sample and the experimental environment also influence the flux jumping behavior. Both these effects stabilize the sample against flux instabilities, and this stabilizing effect increases with decreasing magnetic field sweep rate. Demagnetizing effects are also shown to have a significant influence on flux jumping.Comment: 10 pages, 6 figures, RevTeX4, submitted to Phys. Rev.

Shape Distortion by Irreversible Flux-Pinning-Induced Magnetostriction

Exact analytical results are obtained for the flux-pinning-induced magnetostriction in cylindrical type-II superconductors placed in parallel magnetic field. New modes of irreversible deformation are found: In contrast to the circular cylinder where shape is conserved, it is shown that a square cross-section deforms with considerable distortion. During a field cycle both concave, convex, and even more complicated distortions are predicted. Strong implications for dilatometric measurements on crystals are emphasized. The main results are valid for any critical-state model, j_c = j_c(B).Comment: 4 pages, 4 graph

Gain measurements on VCSEL material using segmented contact technique

We report direct measurements of the optical gain on vertical-cavity surface-emitting laser (VCSEL) material using a stripe-length method featuring segmented contacts. We utilise the similarity of the in-plane transverse electric (TE) polarised matrix element and that of the VCSEL lasing mode and a simple method to reduce round trip effects. The confinement factor is determined from cold-cavity simulations of the in-plane TE polarised slab waveguide mode and used to convert the measured in-plane modal gain into the vertical-cavity modal gain, as required for the VCSEL structure. This gives a threshold material gain of 1440 ± 140 cm−1 at 30 °C for this structure. A comparison with the threshold material gain values determined from the lasing condition, where internal optical losses due to doping induced absorption is included using parameters taken from the literature, indicates the presence of an additional source of optical loss in the experiment which increases the threshold material gain by ∼450 cm−1. A best fit is obtained by increasing the optical loss in the n-DBR (distributed Bragg reflectors) layers to 40 cm−1, which is consistent with previous work on additional scattering losses due to interface roughening in the n-DBR layers. To further demonstrate the utility of this method for rapid optimisation, the gain-peak wavelength is measured directly, and its temperature dependence is compared to the lasing wavelength

Quick fabrication VCSELs for characterisation of epitaxial material

A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitability. Initially, sub-mA threshold current VCSEL devices are produced on AlGaAs-based material, designed for 940 nm emission, using processing methods widely employed in industry. From there, stripped-back Quick Fabrication (QF) devices, based on a bridge-mesa design, are fabricated and this negates the need for benzocyclcobutane (BCB) planarisation. Devices are produced with three variations on the QF design, to characterise the impact on laser performance from removing time-consuming process steps, including wet thermal oxidation and mechanical lapping used to reduce substrate thickness. An increase in threshold current of 1.5 mA for oxidised QF devices, relative to the standard VCSELs, and a further increase of 1.9 mA for unoxidised QF devices are observed, which is a result of leakage current. The tuning of the emission wavelength with current increases by ~0.1 nm/mA for a VCSEL with a 16 μm diameter mesa when the substrate is unlapped, which is ascribed to the increased thermal resistance. Generally, relative to the standard VCSELs, the QF methods employed do not significantly impact the threshold lasing wavelength and the differences in mean wavelengths of the device types that are observed are attributed to variation in cavity resonance with spatial position across the wafer, as determined by photovoltage spectroscopy measurements