Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition

Scanning tunneling microscopy has been used to study the growth of boron on the Si(111) surface. Boron was deposited in the form of B2O3 which was decomposed by heating the substrate. With this technique, it is possible to control the B coverage, and also to produce the well known √3 x √3 reconstruction at annealing temperatures as low as 600°C. The optimal conditions for the formation of the √3 x √3 surface by B2O3 decomposition are given. In addition, the nature of the √3 x √3 surface over a range of B coverages and annealing temperatures is described

Approximate Particle Number Projection for Rotating Nuclei

Pairing correlations in rotating nuclei are discussed within the Lipkin-Nogami method. The accuracy of the method is tested for the Krumlinde-Szyma\'nski R(5) model. The results of calculations are compared with those obtained from the standard mean field theory and particle-number projection method, and with exact solutions.Comment: 15 pages, 6 figures available on request, REVTEX3.

Relativistic confinement of neutral fermions with a trigonometric tangent potential

The problem of neutral fermions subject to a pseudoscalar potential is investigated. Apart from the solutions for $E=\pm mc^{2}$, the problem is mapped into the Sturm-Liouville equation. The case of a singular trigonometric tangent potential ($\sim \mathrm{tan} \gamma x$) is exactly solved and the complete set of solutions is discussed in some detail. It is revealed that this intrinsically relativistic and true confining potential is able to localize fermions into a region of space arbitrarily small without the menace of particle-antiparticle production.Comment: 12 page

First-principles molecular-dynamics simulations of a hydrous silica melt: Structural properties and hydrogen diffusion mechanism

We use {\it ab initio} molecular dynamics simulations to study a sample of liquid silica containing 3.84 wt.% H$_2$O.We find that, for temperatures of 3000 K and 3500 K,water is almost exclusively dissolved as hydroxyl groups, the silica network is partially broken and static and dynamical properties of the silica network change considerably upon the addition of water.Water molecules or free O-H groups occur only at the highest temperature but are not stable and disintegrate rapidly.Structural properties of this system are compared to those of pure silica and sodium tetrasilicate melts at equivalent temperatures. These comparisons confirm the picture of a partially broken tetrahedral network in the hydrous liquid and suggest that the structure of the matrix is as much changed by the addition of water than it is by the addition of the same amount (in mole %) of sodium oxide. On larger length scales, correlations are qualitatively similar but seem to be more pronounced in the hydrous silica liquid. Finally, we study the diffusion mechanisms of the hydrogen atoms in the melt. It turns out that HOSi$_2$ triclusters and SiO dangling bonds play a decisive role as intermediate states for the hydrogen diffusion.Comment: 25 pages, 18 figures. submitte

Enhancement of Sm3+emission by SnO2nanocrystals in the silica matrix

Silica xerogels containing Sm3+ions and SnO2nanocrystals were prepared in a sol–gel process. The image of transmission electron microscopy (TEM) shows that the SnO2nanocrystals are dispersed in the silica matrix. The X-ray diffraction (XRD) of the sample confirms the tetragonal phase of SnO2. The xerogels containing SnO2nanocrystals and Sm3+ions display the characteristic emission of Sm3+ions (4G5/2 → 6HJ(J = 5/2, 7/2, 9/2)) at the excitation of 335 nm which energy corresponds to the energy gap of the SnO2nanocrystals, while no emission of Sm3+ions can be observed for the samples containing Sm3+ions. The enhancement of the Sm3+emission is probably due to the energy transfer from SnO2nanocrystals to Sm3+ions

Charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling

Motivated by the recent experimental evidence of commensurate surface charge density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of electron-electron interactions, and also of electron-phonon coupling, on the narrow surface state band originating from the outer dangling bond orbitals of the surface. We model the sqrt{3} dangling bond lattice by an extended two-dimensional Hubbard model at half-filling on a triangular lattice. We include an on-site Hubbard repulsion U and a nearest-neighbor Coulomb interaction V, plus a long-ranged Coulomb tail. The electron-phonon interaction is treated in the deformation potential approximation. We have explored the phase diagram of this model including the possibility of commensurate 3x3 phases, using mainly the Hartree-Fock approximation. For U larger than the bandwidth we find a non-collinear antiferromagnetic SDW insulator, possibly corresponding to the situation on the SiC and K/Si surfaces. For U comparable or smaller, a rich phase diagram arises, with several phases involving combinations of charge and spin-density-waves (SDW), with or without a net magnetization. We find that insulating, or partly metallic 3x3 CDW phases can be stabilized by two different physical mechanisms. One is the inter-site repulsion V, that together with electron-phonon coupling can lower the energy of a charge modulation. The other is a novel magnetically-induced Fermi surface nesting, stabilizing a net cell magnetization of 1/3, plus a collinear SDW, plus an associated weak CDW. Comparison with available experimental evidence, and also with first-principle calculations is made.Comment: 11 pages, 9 figure

Many-body system with a four-parameter family of point interactions in one dimension

We consider a four-parameter family of point interactions in one dimension. This family is a generalization of the usual $\delta$-function potential. We examine a system consisting of many particles of equal masses that are interacting pairwise through such a generalized point interaction. We follow McGuire who obtained exact solutions for the system when the interaction is the $\delta$-function potential. We find exact bound states with the four-parameter family. For the scattering problem, however, we have not been so successful. This is because, as we point out, the condition of no diffraction that is crucial in McGuire's method is not satisfied except when the four-parameter family is essentially reduced to the $\delta$-function potential.Comment: 8 pages, 4 figure

Finite-Temperature Charge-Ordering Transition and Fluctuation Effects in Quasi-One-Dimensional Electron Systems at Quarter Filling

Finite-temperature charge-ordering phase transition in quasi one-dimensional (1D) molecular conductors is investigated theoretically, based on a quasi 1D extended Hubbard model at quarter filling with interchain Coulomb repulsion $V_\perp$. The interchain term is treated within mean-field approximation whereas the 1D fluctuations in the chains are fully taken into account by the bosonization theory. Three regions are found depending on how the charge ordered state appears at finite temperature when $V_\perp$ is introduced: (i) weak-coupling region where the system transforms from a metal to a charge ordered insulator with finite transition temperature at a finite critical value of $V_\perp$, (ii) an intermediate region where this transition occurs by infinitesimal $V_\perp$ due to the stability of inherent 1D fluctuation, and (iii) strong-coupling region where the charge ordered state is realized already in the purely 1D case, of which the transition temperature becomes finite with infinitesimal $V_\perp$. Analytical formula for the $V_\perp$ dependence of the transition temperature is derived for each region.Comment: 4 pages, submitted to J. Phys. Soc. Jp