Exploratory study on microanalysis of thin films by backscattering techniques

Solid phase epitaxial growth of Si layers was studied by backscattering spectrometry for controllable electrical characteristics. Samples were fabricated by vacuum deposition on a thin layer of Sb before deposition of the amorphous Si layer. Analysis of the resulting SPEG layer showed that Sb was present in the SPEG layer of Si. The characteristic of the SPEG layer against the Si substrate was rectifying. A scanning microprobe picture of a cleaved sample established the presence of a depletion region more than 1 micron below the surface. Hall effect data indicated that the SPEG layer was n-type, with average free carrier concentration of about 10 to the 19th power cm/3 and average electron mobility of about 40 sq cm/Vs. SPEG with Pd silicide or Ni silicide transport layers showed fast initial transient growth regimes with slower growth in the steady state regimes

Des infirmières praticiennes chez les médecins de famille ? Perception des enjeux et perspectives

Face aux défis que nous pose l'augmentation des maladies chroniques et des coûts de la santé, de nouveaux concepts de prise en charge se développent dans les différents pays. Le modèle anglais, à l'instar d'autres pays anglo-saxons, consiste à confier une partie de la prise en charge des patients au cabinet du médecin de famille3, à des « nurses practioners » ou infirmières4 praticiennes spécialisées (IPS) en français. Ces infirmières sont compétentes pour traiter certaines pathologies. Pour ce faire, elles ont le droit de demander des examens médicaux, d'en interpréter les résultats et de prescrire un certain nombre de médicaments. Comment est perçue la collaboration éventuelle avec une IPS dans un cabinet de médecine de famille par les différents professionnels de la santé en Suisse Romande ? Ce travail se propose de récolter l'avis de médecins de famille ainsi que d'infirmières à travers des entretiens individuels. Le but est de recenser les principaux points de discussion soulevés par une implantation éventuelle de ce modèle en Suisse Romande. En effet, cette pratique est nouvelle en Europe continentale où seuls quelques pays permettent actuellement aux infirmières d'effectuer certaines tâches normalement dévolues aux médecins (1). Néanmoins, ce modèle rencontre un intérêt grandissant auprès des gouvernements occidentaux et notamment helvétique, et est de plus en plus discuté dans la littérature médicale. Dans ce contexte, il est intéressant de connaître l'avis des professionnels de la santé qui seront directement touchés par une éventuelle implantation de ce modèle, à savoir ici les médecins de famille (MF) et les infirmières. Ce travail s'articule en trois points. Le premier chapitre brosse la situation sanitaire mondiale puis suisse permettant de comprendre les défis présentés à notre système de santé. Le modèle des IPS qui est une réponse à ces défis y est détaillé. La méthode et les résultats des différents entretiens explorant l'avis des participants quant au modèle des IPS sont exposés en thème Une discussion finale se propose de retenir les points importants liés à une éventuellement implantation des IPS dans les soins primaires en Suisse Romande

Space charge effects in current transport Quarterly status report

Space charge limitations of currents for use in dosimeter

Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates

The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV

Silicon implantation in GaAs

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range

Ion mixing of markers in SiO2 and Si

The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species

Chemical effects in ion mixing of a ternary system (metal-SiO_2)

The mixing of Ti, Cr, and Ni thin films with SiO_2 by low‐temperature (−196–25 °C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO_2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation

Magnetoelectric properties of magnetite thin films

Resistivity, DC Hall effect and transverse magnetoresistance measurements were made on polycrystalline thin films of magnetite (Fe3O4) from 104K to room temperature. The Verwey transition is observed at TV=123K, about 4K higher than reported for bulk magnetite. The ordinary and extraordinary Hall coefficients are negative over the entire temperature range, consistent with negatively charged carriers. The extraordinary Hall coefficient exhibits a rho 1/3 dependence on the resistivity above TV and a rho 2/3 dependence below TV. The magnetoresistance is negative at all temperatures and for all magnetic field strengths. The planar Hall effect signal was below the sensitivity of the present experiment

Pulsed electron beam induced recrystallization and damage in GaAs

Single-pulse electron-beam irradiations of 300-keV 10^(15)Kr+/cm^2 or 300-keV 3×10^(12)Se+/cm^2 implanted layers in unencapsulated GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ~-20 keV and a time duration of ~-10^(–7) s. Analyses by means of MeV He + channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm^2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers between Cu overlayers and Si substrates. Electrical measurements on Si n + p shallow junction diodes demonstrate that a 180-nm-thick Ta film is not an effective diffusion barrier. For the standard test of 30-min annealing in vacuum applied in the present study, the Ta barrier fails after annealing at 500 °C. An amorphous Ta74Si26 thin film improves the performance by raising the failure temperature of a /Ta74Si26(100 nm)/Cu(500 nm) metallization to 650 °C. Unparalled results are obtained with an amorphous ternary Ta36Si14N50 thin film in the Si/Ta36Si14N50 (120 nm)/Cu(500 nm) and in the Si/TiSi2(30 nm)/Ta36SiN50 (80 nm)/Cu(500 nm) metallization that break down only after annealing at 900 °C. The failure is induced by a premature crystallization of the Ta36Si14N50 alloy (whose crystallization temperature exceeds 1000 °C) when in contact with copper