Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F ∼ 6 kV/cm at T = 13 K. At this field the hole drift velocity saturates at vd ∼ 1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F ∼ 7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well

Nanostructured electrodes for thermionic and thermo-tunneling devices

Recently, new quantum features have been studied in the area of ridged quantum wells (RQW). Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wave function and reduce the quantum state density. Electrons, rejected from forbidden quantum states, have to occupy the states with higher energy. As a result, Fermi energy in RQW increases and work function (WF) decreases. We investigate low WF electrode, com-posed from a metal RQW layer and a base substrate. The substrate material was selected so that electrons were confined to the RQW. The WF value depends on ridge geometry and electron confinement. We calculate WF in the metal RQW films grown both on a semiconductor and metal substrates. In the case of semiconductor substrate, wide band gap materials are preferable as they allow more reduction in RQW work function. In the case of metal substrate, low Fermi energy materials are preferable. For most material pairs, the WF was reduced dramatically. Such structures, can serve as electrodes for room temperature thermionic and thermotunnel energy converters and coolers.Comment: 8 pages, 5 figures, 2 table

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si

Spin-wave softening and Hund's coupling in ferromagnetic manganites

Using one-orbital model of hole-doped manganites, we show with the help of Holstein-Primakov transformation that finite Hund's coupling is responsible for the spin-wave softening in the ferromagnetic $B$-phase manganites. We obtain an analytical result for the spin-wave spectrum for \JH\gg t. In the limit of infinte Hund's coupling, the spectrum is the conventional nearest-neighbor Heisenberg ferromagnetic spin-wave. The o(t/\JH)-order correction is negative and thus accounts for the softening near the zone boundary.Comment: 5 pages, 3 figure

Magnetotransport in a two-dimensional electron system in dc electric fields

We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.Comment: Revised version, to appear in Phys. Rev.

The Kemeny Constant For Finite Homogeneous Ergodic Markov Chains

A quantity known as the Kemeny constant, which is used to measure the expected number of links that a surfer on the World Wide Web, located on a random web page, needs to follow before reaching his/her desired location, coincides with the more well known notion of the expected time to mixing, i.e., to reaching stationarity of an ergodic Markov chain. In this paper we present a new formula for the Kemeny constant and we develop several perturbation results for the constant, including conditions under which it is a convex function. Finally, for chains whose transition matrix has a certain directed graph structure we show that the Kemeny constant is dependent only on the common length of the cycles and the total number of vertices and not on the specific transition probabilities of the chain

Incoherent Transport through Molecules on Silicon in the vicinity of a Dangling Bond

We theoretically study the effect of a localized unpaired dangling bond (DB) on occupied molecular orbital conduction through a styrene molecule bonded to a n++ H:Si(001)-(2x1) surface. For molecules relatively far from the DB, we find good agreement with the reported experiment using a model that accounts for the electrostatic contribution of the DB, provided we include some dephasing due to low lying phonon modes. However, for molecules within 10 angstrom to the DB, we have to include electronic contribution as well along with higher dephasing to explain the transport features.Comment: 9 pages, 5 figure

Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model

A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.Comment: 8 pages, 4 figures. accepted to Physical Review

Nonequilibrium Green's-Function Approach to the Suppression of Rectification at Metal--Mott-Insulator Interfaces

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by nonequilibrium Green's functions. The one-dimensional Hubbard model is used for a Mott insulator. The effects of attached metallic electrodes are incorporated into the self-energy. A scalar potential originating from work-function differences and satisfying the Poisson equation is added to the model. For the electron density, we decompose it into three parts. One is obtained by integrating the local density of states over energy to the midpoint of the electrodes' chemical potentials. The others, obtained by integrating lesser Green's functions, are due to the couplings with the electrodes and correspond to an inflow and an outflow of electrons. In Mott insulators, incoming electrons and holes are extended over the whole system, avoiding further accumulation of charge relative to the case without bias. This induces collective charge transport and results in the suppression of rectification.Comment: 18 pages, Figs. 1(b), 2, and 8 replaced. Corrected typo

Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.Comment: 6 pages, 2 figures; to be published in Journal of Applied Physic