Off-Diagonal Long-Range Order: Meissner Effect and Flux Quantization

There has been a proof by Sewell that the hypothesis of off-diagonal long-range order in the reduced density matrix $\rho _2$ implies the Meissner effect. We present in this note an elementary and straightforward proof that not only the Meissner effect but also the property of magnetic flux quantization follows from the hypothesis. It is explicitly shown that the two phenomena are closely related, and phase coherence is the origin for both.Comment: 11 pages, Latex fil

Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques

MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, X-ray rocking curve measurement and cross-sectional transmission electron microscopy. These techniques have clearly revealed substantial changes in structural properties and radiation-induced damage distribution as well as the influence of post-implantation annealing in ^(15)N ion-implanted InP samples. The results from these measurements, which are presented in this paper, are shown to be consistent with each other, and have led to a coherent description of the effects of the implantation and subsequent annealing. In a practical sense this has demonstrated the complementary nature of the analytical capabilities of all of these techniques used for the investigation of the processes involved in high-energy heavy-ion implantation

Amorphization and recrystallization in MeV ion implanted InP crystals

A comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Optical-conductivity sum rule in cuprates and unconventional charge density waves: a short review

We begin with an overview of the experimental results for the temperature and doping dependences of the optical-conductivity spectral weight in cuprate superconductors across the whole phase diagram. Then we discuss recent attempts to explain the observed behavior of the spectral weight using reduced and full models with unconventional $d_{x^2-y^2}$ charge-density waves.Comment: 17 pages, RevTeX4, 4 EPS figures; Invited paper for a special issue of Low Temperature Physics dedicated to the 20th anniversary of HTS

Topological Invariants, Instantons and Chiral Anomaly on Spaces with Torsion

In a spacetime with nonvanishing torsion there can occur topologically stable configurations associated with the frame bundle which are independent of the curvature. The relevant topological invariants are integrals of local scalar densities first discussed by Nieh and Yan (N-Y). In four dimensions, the N-Y form $N= (T^a \wedge T_a - R_{ab} \wedge e^a \wedge e^b)$ is the only closed 4-form invariant under local Lorentz rotations associated with the torsion of the manifold. The integral of $N$ over a compact D-dimensional (Euclidean) manifold is shown to be a topological invariant related to the Pontryagin classes of SO(D+1) and SO(D). An explicit example of a topologically nontrivial configuration carrying nonvanishing instanton number proportional to $\int N$ is costructed. The chiral anomaly in a four-dimensional spacetime with torsion is also shown to contain a contribution proportional to $N$, besides the usual Pontryagin density related to the spacetime curvature. The violation of chiral symmetry can thus depend on the instanton number of the tangent frame bundle of the manifold. Similar invariants can be constructed in D>4 dimensions and the existence of the corresponding nontrivial excitations is also discussed.Comment: 6 pages, RevTeX, no figures, two column

Quadratic Lagrangians and Topology in Gauge Theory Gravity

We consider topological contributions to the action integral in a gauge theory formulation of gravity. Two topological invariants are found and are shown to arise from the scalar and pseudoscalar parts of a single integral. Neither of these action integrals contribute to the classical field equations. An identity is found for the invariants that is valid for non-symmetric Riemann tensors, generalizing the usual GR expression for the topological invariants. The link with Yang-Mills instantons in Euclidean gravity is also explored. Ten independent quadratic terms are constructed from the Riemann tensor, and the topological invariants reduce these to eight possible independent terms for a quadratic Lagrangian. The resulting field equations for the parity non-violating terms are presented. Our derivations of these results are considerably simpler that those found in the literature

Does the 2D Hubbard Model Really Show d-Wave Superconductivity?

Some issues concerning the question if the two-dimensional Hubbard model really show d-wave superconductivity are briefly discussed.Comment: Revtex, no figure

Formation of Buried Oxide in MeV Oxygen Implanted Silicon

We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10^(18)/cm^2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO_2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO_2

High Temperature Macroscopic Entanglement

In this paper I intend to show that macroscopic entanglement is possible at high temperatures. I analyze multipartite entanglement produced by the $\eta$ pairing mechanism which features strongly in the fermionic lattice models of high $T_c$ superconductivity. This problem is shown to be equivalent to calculating multipartite entanglement in totally symmetric states of qubits. I demonstrate that we can conclusively calculate the relative entropy of entanglement within any subset of qubits in an overall symmetric state. Three main results then follow. First, I show that the condition for superconductivity, namely the existence of the off diagonal long range order (ODLRO), is not dependent on two-site entanglement, but on just classical correlations as the sites become more and more distant. Secondly, the entanglement that does survive in the thermodynamical limit is the entanglement of the total lattice and, at half filling, it scales with the log of the number of sites. It is this entanglement that will exist at temperatures below the superconducting critical temperature, which can currently be as high as 160 Kelvin. Thirdly, I prove that a complete mixture of symmetric states does not contain any entanglement in the macroscopic limit. On the other hand, the same mixture of symmetric states possesses the same two qubit entanglement features as the pure states involved, in the sense that the mixing does not destroy entanglement for finite number of qubits, albeit it does decrease it. Maximal mixing of symmetric states also does not destroy ODLRO and classical correlations. I discuss various other inequalities between different entanglements as well as generalizations to the subsystems of any dimensionality (i.e. higher than spin half).Comment: 14 pages, no figure

Multiple Reggeon Exchange from Summing QCD Feynman Diagrams

Multiple reggeon exchange supplies subleading logs that may be used to restore unitarity to the Low-Nussinov Pomeron, provided it can be proven that the sum of Feynman diagrams to all orders gives rise to such multiple regge exchanges. This question cannot be easily tackled in the usual way except for very low-order diagrams, on account of delicate cancellations present in the sum which necessitate individual Feynman diagrams to be computed to subleading orders. Moreover, it is not clear that sums of high-order Feynman diagrams with complicated criss-crossing of lines can lead to factorization implied by the multi-regge scenario. Both of these difficulties can be overcome by using the recently developed nonabelian cut diagrams. We are then able to show that the sum of $s$-channel-ladder diagrams to all orders does lead to such multiple reggeon exchanges.Comment: uu-encoded latex file with 11 postscript figures (20 pages