Ballistic transport properties across nonuniform strain barriers in graphene

We study the effect of uniaxial strain on the transmission and the conductivity across a strain-induced barrier in graphene. At variance with conventional studies, which consider sharp barriers, we consider a more realistic, smooth barrier, characterized by a nonuniform, continuous strain profile. Our results are instrumental towards a better understanding of the transport properties in corrugated graphene.Comment: High Press. Res., to appea

Resonant modes in strain-induced graphene superlattices

We study tunneling across a strain-induced superlattice in graphene. In studying the effect of applied strain on the low-lying Dirac-like spectrum, both a shift of the Dirac points in reciprocal space, and a deformation of the Dirac cones is explicitly considered. The latter corresponds to an anisotropic, possibly non-uniform, Fermi velocity. Along with the modes with unit transmission usually found across a single barrier, we analytically find additional resonant modes when considering a periodic structure of several strain-induced barriers. We also study the band-like spectrum of bound states, as a function of conserved energy and transverse momentum. Such a strain-induced superlattice may thus effectively work as a mode filter for transport in graphene

Statistical correlations of an anyon liquid at low temperatures

Using a proposed generalization of the pair distribution function for a gas of non-interacting particles obeying fractional exclusion statistics in arbitrary dimensionality, we derive the statistical correlations in the asymptotic limit of vanishing or low temperature. While Friedel-like oscillations are present in nearly all non-bosonic cases at T=0, they are characterized by exponential damping at low temperature. We discuss the dependence of these features on dimensionality and on the value of the statistical parameter alpha.Comment: to appear in Phys. Chem. Liquid

Dynamical polarization of graphene under strain

We study the dependence of the plasmon dispersion relation of graphene on applied uniaxial strain. Besides electron correlation at the RPA level, we also include local field effects specific for the honeycomb lattice. As a consequence of the two-band character of the electronic band structure, we find two distinct plasmon branches. We recover the square-root behavior of the low-energy branch, and find a nonmonotonic dependence of the strain-induced modification of its stiffness, as a function of the wavevector orientation with respect to applied strain.Comment: Phys. Rev. B, accepte

Effect of uniaxial strain on plasmon excitations in graphene

Uniaxial strain is known to modify significantly the electronic properties of graphene, a carbon single layer of atomic width. Here, we study the effect of applied strain on the composite excitations arising from the coupling of charge carriers and plasmons in graphene, i.e. the plasmarons. Specifically, we predict that the plasmaron energy dispersion, which has been recently observed experimentally in unstrained graphene, is shifted and broadened by applied uniaxial strain. Thus, strain constitutes an additional parameter which may be useful to tune graphene properties in plasmaronic devices.Comment: Invited oral lecture at the 23rd AIRAPT International Conference on "High Pressure Science and Technology", Mumbai (India), September 25-30, 2011. To be published in J. Phys.: Conf. Series (2012

Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics

We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that a fraction of out-of-equilibrium spin polarized carrier actually travel across the Cu_{2}O layer up to distances of almost 100 nm at low temperature. The corresponding spin diffusion length dspin is estimated around 40 nm. Furthermore, we find that the insertion of a SrTiO_{3} tunneling barrier does not improve spin injection, likely due to the matching of resistances at the interfaces. Our result on dspin may be likely improved, both in terms of Cu_{2}O crystalline quality and sub-micrometric morphology and in terms of device geometry, indicating that Cu_{2}O is a potential material for efficient spin transport in devices based on crystalline oxides.Comment: 15 pages, 10 figure