Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine)

Poly(aniline-co-o-toluidine) (PANI-co-POT) thin films were deposited on indium tin oxide- (ITO-) coated glass substrates by electrochemical polymerization under cyclic voltammetric conditions from aniline-co-o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. These measurements showed that the optical band gap of the copolymer films is on the order of 2.65 eV. On the other hand, ITO/PANI-co-POT/Al devices were fabricated by thermal evaporation of Aluminum circular electrodes on the as-deposited PANI-co-POT films. The Current-Voltage characteristics of these devices are nonlinear. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The C-F characteristics were also measured

Dielectric Behavior of Ceramic (BST)/Epoxy Thick Films

Composite materials were made by mixing powders of Ba1−xSrxTiO3 (x=0.2 and 0.4) ceramics and epoxy resin with various volume fractions (vol%). Dielectric measurements of these composites were performed as a function of filler ratio in the range 100–360°K at 10 KHz. The dielectric constant of the composite increased with increasing volume fraction varies slightly with temperature. The 20 vol% of BST(0.4)-epoxy composite had the highest dielectric constant of 19.4 and dielectric loss tangent of 0.027. Among the dielectric mixing models presented, the model of Lichtenecker shows the best fit to the experimental data for both composites