Kinetics of exciton photoluminescence in type-II semiconductor superlattices

The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.Comment: 3 PostScript figure

Landscape science: a Russian geographical tradition

The Russian geographical tradition of landscape science (landshaftovedenie) is analyzed with particular reference to its initiator, Lev Semenovich Berg (1876-1950). The differences between prevailing Russian and Western concepts of landscape in geography are discussed, and their common origins in German geographical thought in the late nineteenth and early twentieth centuries are delineated. It is argued that the principal differences are accounted for by a number of factors, of which Russia's own distinctive tradition in environmental science deriving from the work of V. V. Dokuchaev (1846-1903), the activities of certain key individuals (such as Berg and C. O. Sauer), and the very different social and political circumstances in different parts of the world appear to be the most significant. At the same time it is noted that neither in Russia nor in the West have geographers succeeded in specifying an agreed and unproblematic understanding of landscape, or more broadly in promoting a common geographical conception of human-environment relationships. In light of such uncertainties, the latter part of the article argues for closer international links between the variant landscape traditions in geography as an important contribution to the quest for sustainability

Semiconductor A3B5 nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presented