Two dimensional imaging observations of meter-decameter bursts associated with the February 1986 flare activity

An analysis is presented of the two dimensional imaging observations of a flare observed on 3 Feb. l986 using the Clark Lake Multifrequency Radioheliograph. The flare produced almost all types of Meter-decimeter radio emission: enhanced storm radiation, type III/V bursts, II and IV and flare continuum. The flare continuum had early (FCE) and late (FC II) components and the type II occurred during the period between these two components. Comparing the source positions of type III/V and FCE it was found that these bursts must have occurred along adjacent open and closed field lines, respectively. The positional analysis of type II and FC II implies that the nonthermal electrons responsible for FC II need not be accelerated by type II shock and this conclusion is further supported by the close association of FC II with a microwave peak. Using the positional and temporal analysis of all these bursts and the associated hard X-ray and microwave emissions, a schematic model is developed for the magnetic field configuration in the flaring region in which the nonthermal particles responsible for these bursts are confined or along which they propagate

A Reaction Diffusion Model Of Pattern Formation In Clustering Of Adatoms On Silicon Surfaces

We study a reaction diffusion model which describes the formation of patterns on surfaces having defects. Through this model, the primary goal is to study the growth process of Ge on Si surface. We consider a two species reaction diffusion process where the reacting species are assumed to diffuse on the two dimensional surface with first order interconversion reaction occuring at various defect sites which we call reaction centers. Two models of defects, namely a ring defect and a point defect are considered separately. As reaction centers are assumed to be strongly localized in space, the proposed reaction-diffusion model is found to be exactly solvable. We use Green's function method to study the dynamics of reaction diffusion processes. Further we explore this model through Monte Carlo (MC) simulations to study the growth processes in the presence of a large number of defects. The first passage time statistics has been studied numerically. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4757592]Microelectronics Research Cente