Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x

We study acceptor-type defects in GaSb1−xBix grown by molecular beam epitaxy. The hole density of the GaSb1−xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 − cm 3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects

Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2_2Cu3_3O6+δ_{6+\delta}

We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+\delta}$ (0 $\le$ $\delta$ $\le$ 1) as a function of the oxygen dopant concentration ($\delta$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $\delta$ plot, lies on a universal curve originating at the critical hole concentration ($P_c$) = 1/16 in the $T_c$ $vs.$ $P_{pl}$ plot. Our analysis suggests that the universal behavior of $T_c$($P_{pl}$) can be understood in terms of the competition and collaboration of chemical-phases and electronic-phases that exist in the system. We conclude that the global superconductivity behavior of YBa$_2$Cu$_3$O$_{6+\delta}$ as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on $P_c$, such as 2 $\times$ $P_c$, 3 $\times$ $P_c$ and 4 $\times$ $P_c$. We find that there are at least two intrinsic electronic superconducting phases of $T_c$ = 60 K at 2 $\times$ $P_c$ = 1/8 and $T_c$ = 90 K at 3 $\times$ $P_c$ = 3/16.Comment: 4 pages, 2 figure

Band anticrossing in GaNxSb1–x

Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Photoluminescence (PL) has been observed from dilute InNxAs1–x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) k·p Hamiltonian

Anomalously large oxygen-ordering contribution to the thermal expansion of untwinned YBa2Cu3O6.95 single crystals: a glass-like transition near room temperature

We present high-resolution capacitance dilatometry studies from 5 - 500 K of untwinned YBa2Cu3Ox (Y123) single crystals for x ~ 6.95 and x = 7.0. Large contributions to the thermal expansivities due to O-ordering are found for x ~ 6.95, which disappear below a kinetic glass-like transition near room temperature. The kinetics at this glass transition is governed by an energy barrier of 0.98 +- 0.07 eV, in very good agreement with other O-ordering studies. Using thermodynamic arguments, we show that O-ordering in the Y123 system is particularly sensitive to uniaxial pressure (stress) along the chain axis and that the lack of well-ordered chains in Nd123 and La123 is most likely a consequence of a chemical-pressure effect.Comment: 4 pages, 3 figures, submitted to PR

Band gap reduction in GaNSb alloys due to the anion mismatch

The structural and optoelectronic properties in GaNxSb1–x alloys (0<=x<0.02) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction (XRD) and reciprocal space mapping indicate that the GaNxSb1–x epilayers are of high crystalline quality and the alloy composition is found to be independent of substrate, for identical growth conditions. The band gap of the GaNSb alloys is found to decrease with increasing nitrogen content from absorption spectroscopy. Strain-induced band-gap shifts, Moss-Burstein effects, and band renormalization were ruled out by XRD and Hall measurements. The band-gap reduction is solely due to the substitution of dilute amounts of highly electronegative nitrogen for antimony, and is greater than observed in GaNAs with the same N content

Transport Anomalies and the Role of Pseudogap in the "60-K Phase" of YBa_{2}Cu_{3}O_{7-\delta}

We report the result of our accurate measurements of the a- and b-axis resistivity, Hall coefficient, and the a-axis thermopower in untwinned YBa_{2}Cu_{3}O_{y} single crystals in a wide range of doping. It is found that both the a-axis resistivity and the Hall conductivity show anomalous dependences on the oxygen content y in the "60-K phase" below the pseudogap temperature T^*. The complete data set enables us to narrow down the possible pictures of the 60-K phase, with which we discuss a peculiar role of the pseudogap in the charge transport.Comment: 4 pages, 4 figures, accepted for publication in PR

Improving the Computational Thinking Pedagogical Capabilities of School Teachers

The idea of computational thinking as skills and universal competence which every child should possess emerged last decade and has been gaining traction ever since. This raises a number of questions, including how to integrate computational thinking into the curriculum, whether teachers have computational thinking pedagogical capabilities to teach children, and the important professional development and training areas for teachers. The aim of this paper is to address the strategic issues by illustrating a series of computational thinking workshops for Foundation to Year 8 teachers held at an Australian university. Data indicated that teachers\u27 computational thinking understanding, pedagogical capabilities, technological know-how and confidence can be improved in a relatively short period of time through targeted professional learning

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

A study into the optimal deposition temperature for ultra-thin La2O3/Ge and Y2O3/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La2O3 and Y2O3) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La2O3 has been found to be more reactive to Ge than Y2O3, forming LaGeOx and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44 °C to 400 °C. In contrast, Y2O3/Ge deposited at 400 °C allows for an ultra-thin GeO2 layer at the interface, which can be eliminated during annealing at temperatures higher than 525 °C leaving a pristine YGeOx/Ge interface. The Y2O3/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1 eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y2O3/Ge stacks has been estimated to be 5.7 ± 0.1 eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400 °C), the Y2O3/Ge stack exhibits a higher conduction band offset (>2.3 eV) than the La2O3/Ge (∼2 eV), has a larger band gap (by about 0.3 eV), a germanium sub-oxide free interface, and leakage current (∼10−7 A/cm2 at 1 V) five orders of magnitude lower than the respective La2O3/Ge stack. Our study strongly points to the superiority of the Y2O3/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology

The Distribution, Excitation and Formation of Cometary Molecules: Methanol, Methyl Cyanide and Ethylene Glycol

We present an interferometric and single dish study of small organic species toward Comets C/1995 O1 (Hale-Bopp) and C/2002 T7 (LINEAR) using the BIMA interferometer at 3 mm and the ARO 12m telescope at 2 mm. For Comet Hale-Bopp, both the single-dish and interferometer observations of CH3OH indicate an excitation temperature of 105+/-5 K and an average production rate ratio Q(CH3OH)/Q(H2O)~1.3% at ~1 AU. Additionally, the aperture synthesis observations of CH3OH suggest a distribution well described by a spherical outflow and no evidence of significant extended emission. Single-dish observations of CH3CN in Comet Hale-Bopp indicate an excitation temperature of 200+/-10 K and a production rate ratio of Q(CH3CN)/Q(H2O)~0.017% at ~1 AU. The non-detection of a previously claimed transition of cometary (CH2OH)2 toward Comet Hale-Bopp with the 12m telescope indicates a compact distribution of emission, D<9'' (<8500 km). For the single-dish observations of Comet T7 LINEAR, we find an excitation temperature of CH3OH of 35+/-5 K and a CH3OH production rate ratio of Q(CH3OH)/Q(H2O)~1.5% at ~0.3 AU. Our data support current chemical models that CH3OH, CH3CN and (CH2OH)2 are parent nuclear species distributed into the coma via direct sublimation off cometary ices from the nucleus with no evidence of significant production in the outer coma.Comment: accepted for publication in Ap